Theory of electroreflectance and photoreflectance of semiconductors

Hamnett, A.; Gilman, J. M. A.; Batchelor, Richard A.

doi:10.1016/0013-4686(92)85046-n

Cited by 13 publications

(6 citation statements)

References 15 publications

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“…We note that Hamnett et al. − have studied the EER spectra of GaAs/electrolyte interfaces more carefully and found that, in general, the Aspnes equation did not adequately describe all features of the system. Although for the n-GaAs/0.1 M KOH interface they found the EER signal to be proportional to the modulation amplitude, the signal was found to depend on the dc potential under conditions where this is not expected according to the Aspnes equation .…”

Section: Theoretical Preliminariesmentioning

confidence: 79%

“…Electroreflectance at variable frequency is a valuable tool for the study of complex semiconductor/ electrolyte interfaces and has already been applied to the study of the RuS 2 /electrolyte interface. 22 We note that Hamnett et al [23][24][25] have studied the EER spectra of GaAs/electrolyte interfaces more carefully and found that, in general, the Aspnes equation did not adequately describe all features of the system. Although for the n-GaAs/0.1 M KOH interface they found the EER signal to be proportional to the modulation amplitude, the signal was found to depend on the dc potential under conditions where this is not expected according to the Aspnes equation.…”

Section: Theoretical Preliminariesmentioning

confidence: 95%

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Electrolyte Electroreflectance Study of the Oscillatory Hydrogen Peroxide Reduction on n-GaAs

et al. 1998

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The oscillatory reduction of hydrogen peroxide on an n-type gallium arsenide electrode was studied by means of the electrolyte electroreflectance technique. It is found that during the current oscillations both the reflectivity and electroreflectance oscillate with qualitatively different patterns. A simple model, which attributes the current oscillations to an anomalous dependence of the band bending in the semiconductor depletion layer on the potential drop across the semiconductor/electrolyte interface, is considered for comparison. It is concluded that the absolute reflectivity detects a slow variable of the system, most likely related to the chemical composition of the surface, and the electroreflectance detects a fast variable of the system, most likely related to the interfacial potential distribution.

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Section: Theoretical Preliminariesmentioning

confidence: 79%

Section: Theoretical Preliminariesmentioning

confidence: 95%

Electrolyte Electroreflectance Study of the Oscillatory Hydrogen Peroxide Reduction on n-GaAs

et al. 1998

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“…Aspnes [36] derived the impact of electric field on FK variations in the dielectric constant of solids. Subsequently, Shen and Pollak [43], Batchelor et al [21], Hamnett et al [38], Estrera et al [39], and Hall et al [23] further enhanced Aspnes' H(z) electro-optic function for the complex Airy function FKO analysis of the experimental PR lineshapes. Batchelor et al [21] derived the FKO change (Δε) in the complex DF induced by the electric field (F) as follows:…”

Section: Theoretical and Computational Developmentmentioning

confidence: 99%

“…For parabolic band edges of solids, Aspnes [36] derived the FKO change in the dielectric function ( e D ) in terms of a KK-consistent electrooptic function, H(z), using complex Airy functions [37]. Batchelor et al [21], Hamnett et al [38], Estrera et al [39], and Hall et al [23] utilized Aspnes' H(z) electro-optic function on FKO in the PR spectra of semiconductors. Furthermore, they employed the energy-dependent width of the form [21] to overcome the limitations in pure Lorentzian broadening.…”

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confidence: 99%

Gaussian and Faddeeva broadening of the Franz-Keldysh oscillations at three-dimensional critical-points

Alomar

2023

Phys. Scr.

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Faddeeva broadening (FB) couples the physical characteristics of Gaussian and Lorentzian broadening into a single profile shaping the spectral response of dielectric functions. The electric field induces Franz-Keldysh oscillations (FKOs) as deviations in the dielectric function of semiconductors. We investigated the impact of Gaussian and FB on FKOs at the isotropic M0 of three-dimensional critical points. The twenty-pole Martin–Donoso–Zamudio quadrature was applied to compute the FB of FKOs in differential reflectivity based on the electro-optic function, H(z), with the complex Airy function, Ai(z). H(z) was simplified into a compact product of K(z) = Ai'(z) + √z Ai(z) to reduce the truncation error and determine its asymptotics. We derived a general asymptotic expansion of order N, accounting for Stokes’ phenomenon as the arg(z) crosses 2π/3. The computation of H(z) is detailed for twelve digits of accuracy. The effects of higher Gaussian and FB widths on the damping of FKOs are assessed using FKO peak-to-peak attenuations. For the low-field regime, this work H(z) smoothly evolves into Aspnes’ third derivative functional form (TDFF). Between low- to intermediate-field regimes, we investigated the boundaries for the relevant use of the TDFF by assessing parameters extracted from simulated lineshapes, and the average root mean-squared error.We fitted of the Faddeeva broadened single Airy model ΔR/R to published experimental photoreflectance (PR) lineshapes of InGaAsP. To model degenerate light-and heavy-holes transitions, we fitted of the Faddeeva broadened double Airy model to published experimental contactless electroreflectance (CER) lineshapes of GaAs. In addition to legacy mean-square error χ2 and coefficient of determination R2, the goodness of fit was evaluated using the unbiased Akaike information criteria. The effectiveness of Faddeeva versus Lorentzian broadening in sample PR spectra analysis was assessed using single Airy function FKO models. Concludingly, the FB of the differential reflectivity ΔR/R model outperformed the Lorentzian broadening even with the empirical energy-dependent width.

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“…PR belongs to the family of modulated reflectance techniques such as electroreflectance or piezoreflectance. The main advantage of PR is that, as it uses an optical modulation, the whole setup is optics based, and does not require any previous preparation of the sample for analysis such as contact deposition [15,16].…”

Section: Photoluminescence and Photoreflectancementioning

confidence: 99%

Specific tools for studying the optical response of heterogeneous thin film layers

et al. 2017

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The extraordinary progresses in the design and realization of structures in inorganic or organic thin films, whether or not including nanoparticles, make it possible to develop devices with very specific properties. Mastering the links between the macroscopic optical properties and the opto-geometrical parameters of these heterogeneous layers is thus a crucial issue. We propose to present the tools used to characterize and to model thin film layers, from an optical point of view, highlighting the interest of coupling both experimental and simulation studies for improving our knowledge on the optical response of the structure. Different examples of studies are presented on CIGS, Perovskite,P3HT:ZnO, PC70BM, organic layer containing metallic nanoparticles and colored solar cells.

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Theory of electroreflectance and photoreflectance of semiconductors

Cited by 13 publications

References 15 publications

Electrolyte Electroreflectance Study of the Oscillatory Hydrogen Peroxide Reduction on n-GaAs

Electrolyte Electroreflectance Study of the Oscillatory Hydrogen Peroxide Reduction on n-GaAs

Gaussian and Faddeeva broadening of the Franz-Keldysh oscillations at three-dimensional critical-points

Specific tools for studying the optical response of heterogeneous thin film layers

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