Theory of grain-boundary and intragrain recombination currents in polysilicon p-n-junction solar cells

Fossum, J.G.; Lindholm, F.A.

doi:10.1109/t-ed.1980.19924

Cited by 148 publications

(28 citation statements)

References 8 publications

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“…The J ( V ) relations for these cases are summarized in Table I. Similar results have been obtained in previous works on this problem 20,22 , however some of the relations we present are new. In Sec.…”

Section: Introductionsupporting

confidence: 85%

Charged grain boundaries reduce the open-circuit voltage of polycrystalline solar cells—An analytical description

Gaury

Haney

2016

Journal of Applied Physics

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Analytic expressions are presented for the dark current-voltage relation J(V ) of a pn+ junction with positively charged columnar grain boundaries with high defect density. These expressions apply to non-depleted grains with sufficiently high bulk hole mobilities. The accuracy of the formulas is verified by direct comparison to numerical simulations. Numerical simulations further show that the dark J(V ) can be used to determine the open-circuit potential Voc of an illuminated junction for a given short-circuit current density Jsc. A precise relation between the grain boundary properties and Voc is provided, advancing the understanding of the influence of grain boundaries on the efficiency of thin film polycrystalline photovoltaics like CdTe and Cu(In, Ga)Se2.

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Section: Introductionsupporting

confidence: 85%

Charged grain boundaries reduce the open-circuit voltage of polycrystalline solar cells—An analytical description

Gaury

Haney

2016

Journal of Applied Physics

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“…With these unparalleled properties, poly-Si has become one of the most important electronic materials used in a vast variety of applications including CMOS transistor, sensing, nanofluidics, thin film transistor (TFT) in displays, photovoltaics, etc. [1][2][3][4][5] Being able to grow high-quality III-V structures on poly-Si could open up a new pathway for low-cost monolithic integrations of optoelectronics with these many applications. In particular, single-crystalline structures that are micron-sized are critical to reduce surface-to-volume ratios.…”

Section: Manuscript Textmentioning

confidence: 99%

Single Crystalline InGaAs Nanopillar Grown on Polysilicon with Dimensions beyond the Substrate Grain Size Limit

Tran

et al. 2013

Nano Lett.

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Monolithic integration of III-V optoelectronic devices with materials for various functionalities inexpensively is always desirable. Polysilicon (poly-Si) is an ideal platform because it is dopable and semi-conducting and can be deposited and patterned easily on a wide range of low cost substrates. However, the lack of crystalline coherency in poly-Si poses an immense challenge for high-quality epitaxial growth. In this work, we demonstrate, for the first time, direct growth of micron-sized InGaAs/GaAs nanopillars on polysilicon. Transmission electron microscopy shows that the micron-sized pillars are single-crystalline and single Wurzite-phase, far exceeding the substrate crystal grain size ~100nm. The high quality growth is enabled by the unique tapering geometry at the base of the nanostructure, which reduces the effective InGaAs/Si contact area to < 40 nm in diameter. The small footprint not only reduces stress due to lattice mismatch but also prevents the nanopillar from nucleating on multiple Si crystal grains. This relaxes the grain size requirement for poly-Si, potentially reducing the cost for poly-Si deposition. Lasing is achieved in the as-grown pillars under optical pumping, attesting their excellent crystalline and optical quality. These promising results open up a pathway for low-cost synergy of optoelectronics with other technologies such as CMOS integrated circuits, sensing, nanofluidics, thin film transistor display, photovoltaics, etc.

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“…22. If the lifetimes of electrons and holes are τ e and τ h , respectively, in the Type III region, we can extend the algorithm of Fossum and Lindholm to the bulk region to express the electron current (in p-type samples) at the edge of the interface space-charge region [72].…”

Section: Boundary/interface Conditionsmentioning

confidence: 99%

Thin‐Film Silicon Solar Cells

Sopori

2003

Handbook of Photovoltaic Science and Engineering

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Theory of grain-boundary and intragrain recombination currents in polysilicon p-n-junction solar cells

Cited by 148 publications

References 8 publications

Charged grain boundaries reduce the open-circuit voltage of polycrystalline solar cells—An analytical description

Charged grain boundaries reduce the open-circuit voltage of polycrystalline solar cells—An analytical description

Single Crystalline InGaAs Nanopillar Grown on Polysilicon with Dimensions beyond the Substrate Grain Size Limit

Thin‐Film Silicon Solar Cells

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