Theory of grain boundary recombination and carrier transport in polycrystalline silicon under optical illumination

Joshi, D. P.; Bhatt, D.P.

doi:10.1109/16.43821

Cited by 44 publications

(24 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…± ± In the space charge region ÀW g x W g , we use the model of Joshi et al [14]. This is possible, since we assume an uniform illumination in that zone.…”

Section: Theorymentioning

confidence: 99%

“…Grains G1 and G2 are supposed semi-infinite. The GB depletion region is delimited by the planes x AEW g , where W g depends on the potential barriers height qV g [14]. The absorption coefficient a, the diffusion constant D and the diffusion length L are considered identical in grains G1 and G2.…”

Section: Theorymentioning

confidence: 99%

“…Seager [12] considered the LBIC and EBIC profiles far from the GB at distances greater than the effective excitation size in order to estimate the recombination velocity. Other authors [14,15] have studied the GB with respect to its energy band diagram. Joshi and Bhatt [14] suggested an analytical model of a grain boundary recombination and carrier transport in polycrystalline silicon under uniform optical illumination.…”

Section: Introductionmentioning

confidence: 99%

“…Other authors [14,15] have studied the GB with respect to its energy band diagram. Joshi and Bhatt [14] suggested an analytical model of a grain boundary recombination and carrier transport in polycrystalline silicon under uniform optical illumination. Burk [10], argued that for some GBs the recombination velocity V r is unreasonably high and for other GBs, V r is unreasonably low.…”

Section: Introductionmentioning

confidence: 99%

“…The theoretical expressions that we have derived take into account the band bending [14,15] and the changes of the optical absorption in the GB region. These changes in the optical absorption are due to the band gap narrowing [16] in the GB.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Consideration of Band Bending and Reduced Optical Transmittance at Grain Boundaries in LBIC Analysis

Bouaïcha¹,

Karoui

Bennaceur

1999

phys. stat. sol. (a)

View full text Add to dashboard Cite

“…± ± In the space charge region ÀW g x W g , we use the model of Joshi et al [14]. This is possible, since we assume an uniform illumination in that zone.…”

Section: Theorymentioning

confidence: 99%

Section: Theorymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Consideration of Band Bending and Reduced Optical Transmittance at Grain Boundaries in LBIC Analysis

Bouaïcha¹,

Karoui

Bennaceur

1999

phys. stat. sol. (a)

View full text Add to dashboard Cite

Understanding Detrimental and Beneficial Grain Boundary Effects in Halide Perovskites

et al. 2018

View full text Add to dashboard Cite

Grain boundaries play a key role in the performance of thin‐film optoelectronic devices and yet their effect in halide perovskite materials is still not understood. The biggest factor limiting progress is the inability to identify grain boundaries. Noncrystallographic techniques can misidentify grain boundaries, leading to conflicting literature reports about their influence; however, the gold standard – electron backscatter diffraction (EBSD) – destroys halide perovskite thin films. Here, this problem is solved by using a solid‐state EBSD detector with 6000 times higher sensitivity than the traditional phosphor screen and camera. Correlating true grain size with photoluminescence lifetime, carrier diffusion length, and mobility shows that grain boundaries are not benign but have a recombination velocity of 1670 cm s−1, comparable to that of crystalline silicon. Amorphous grain boundaries are also observed that give rise to locally brighter photoluminescence intensity and longer lifetimes. This anomalous grain boundary character offers a possible explanation for the mysteriously long lifetime and record efficiency achieved in small grain halide perovskite thin films. It also suggests a new approach for passivating grain boundaries, independent of surface passivation, to lead to even better performance in optoelectronic devices.

show abstract

The Electrical Behaviors of Grain Boundaries in Polycrystalline Optoelectronic Materials

Gao,

Leng,

Zhao

et al. 2023

Advanced Materials

View full text Add to dashboard Cite

Polycrystalline optoelectronic materials are widely used for photoelectric signal conversion and energy harvesting, and play an irreplaceable role in the semiconductor field. As an important factor in determining the optoelectronic properties of polycrystalline materials, grain boundaries (GBs) have been the focus of research. Particular emphases have been placed on the generation and height of GB barriers, how carriers move at GBs, whether GBs act as carrier transport channels or recombination sites, and how to change the device performance by altering the electrical behaviors of GBs. This review introduces the evolution of GB theory and experimental observation history, classifies GB electrical behaviors from the perspective of carrier dynamics, summarizes carrier transport state under the external conditions such as bias and illumination and the related band bending. Then the carrier scattering at GBs and the electrical differences between GBs and twin boundaries are discussed. Lastly, the review describes how the electrical behaviors of GBs can be influenced and modified by treatments such as passivation or by consciously adjusting the distribution of grain boundary elements. By studying the carrier dynamics and the relevant electrical behaviors of GBs in polycrystalline materials, researchers can develop optoelectronics with higher performance.This article is protected by copyright. All rights reserved

show abstract

Theory of grain boundary recombination and carrier transport in polycrystalline silicon under optical illumination

Cited by 44 publications

References 36 publications

Consideration of Band Bending and Reduced Optical Transmittance at Grain Boundaries in LBIC Analysis

Consideration of Band Bending and Reduced Optical Transmittance at Grain Boundaries in LBIC Analysis

Understanding Detrimental and Beneficial Grain Boundary Effects in Halide Perovskites

The Electrical Behaviors of Grain Boundaries in Polycrystalline Optoelectronic Materials

Contact Info

Product

Resources

About