Theory of inter‐valence‐band electronic raman scattering in cubic semiconductors without and with an external electric field

Abstract

Interband electronic resonance Raman scattering for excitation from the split-off valence band to the light-hole and heavy-hole band and from the light-hole band to the heavy-hole band in p-type semiconductors with diamond or zincblende structure has been studied. The polarization dependence of these electronic Raman transitions is stated. The influence of a strong electric field on the form and magnitude of the scattering cross section is calculated. The Raman spectrum will be depressed in the presence of the strong elect.ric field.All explicit results are given for band parameters of Ge.

Theory of interference between electronic and phonon Raman Scattering

“…Furthermore, the investigation of the discussed interference in a strong electric field may bring out some interesting points. As has been shown earlier [4], the electronic part of the scattering spectrum is rather sensitive t o an electric field, becoming suppressed a t not too high field strength. The phonon line shape, in contrast, is not affected [13].…”

“…Obviously Ap(m,) is then the expression for the one-phonon-scattering amplitude as known from third-order perturbation theory [ 11, including also the so-called three-band terms [lo]. AE(m,) represents the scattering amplitude for the resonant intervalence band scattering [3,4]. I n this case the cross section consists only of the two non-interacting spectra because the interference terms vanish.…”

“…Interband [2] and intervalence band scattering [3,4] have been studied mainly theoretically and, to our knowledge, no direct experimental observation has been reported so far.…”

Interband electron Raman scattering in a quantum wire in a transverse magnetic field

“…This feature of the ERS allows to determine the subband structure of the system by a direct inspection of singularity positions in the spectra. For bulk semiconductors the ERS has been studied in the presence of external magnetic and electric fields [15][16][17]. In the case of a quantum well preliminary results were reported in [18].…”

“…Therefore, in the final state we have a real EHP in the crystal and a photon of the secondary radiation. The influence of external fields on such processes for bulk semiconductors is investigated in [16,17].…”