1995
DOI: 10.4028/www.scientific.net/msf.196-201.103
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Theory of Interstitial Oxygen in Silicon and Germanium

Abstract: Abstract. The interstitial oxygen centers in silicon and germanium are reconsidered and compared in an analysis based on the first-principles total-energy determination of the potential-energy surface of the centers, and a calculation of their respective low energy excitations and infrared absorption spectra. The total-energy calculations reveal unambiguously that interstitial oxygen is quantum delocalized, the delocalization being essentially different in silicon and in germanium. Oxygen in silicon lies at th… Show more

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Cited by 4 publications
(1 citation statement)
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“…Oxygen in germanium, while first investigated at about the same time, 2,3 has been reinvestigated more actively recently, due to progress in spectroscopy and to the availability of quasimonoisotopic germanium samples. [4][5][6][7][8][9] Although the basic structure for the defect centers is generally accepted, namely, atomic oxygen breaking the Si-Si or the Ge-Ge bonds and staying near the bond center, there are some fundamental aspects of these systems that remain unsolved. For example, the comparison of the low-energy-excitation and infrared spectra of both centers is certainly puzzling.…”
Section: Introductionmentioning
confidence: 99%
“…Oxygen in germanium, while first investigated at about the same time, 2,3 has been reinvestigated more actively recently, due to progress in spectroscopy and to the availability of quasimonoisotopic germanium samples. [4][5][6][7][8][9] Although the basic structure for the defect centers is generally accepted, namely, atomic oxygen breaking the Si-Si or the Ge-Ge bonds and staying near the bond center, there are some fundamental aspects of these systems that remain unsolved. For example, the comparison of the low-energy-excitation and infrared spectra of both centers is certainly puzzling.…”
Section: Introductionmentioning
confidence: 99%