Theory of lifetime spectroscopy

doi:10.1007/3-540-27922-9_4

Springer Series in Material Science

2005

DOI: 10.1007/3-540-27922-9_4

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Theory of lifetime spectroscopy

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2022

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Carrier Lifetime Limitation of Industrial Ga-Doped Cz-Grown Silicon After Different Solar Cell Process Flows

Post

Niewelt

Kwapil

et al. 2022

IEEE J. Photovoltaics

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Gallium-doped silicon material has been rapidly gaining importance in the photovoltaic industry as a boron-oxygen defect-free material with promising minority carrier lifetime. We investigate the influence of different cell process flows [passivated emitter and rear cell tunneling-oxide-passivating contact, and a "hot oxidation" process] on the bulk material quality of an industrial Ga-doped Cz-grown silicon material, as well as its lightand elevated temperature induced degradation degradation behavior under light at elevated temperature. We measure a generally high carrier lifetime level, which remains limited by an unknown recombination-active defect after most processes. Hydrogenation seems to passivate this unknown defect. In addition, we demonstrate that such high-quality p-type material can suffer noticeably by iron even for extremely low concentrations below 10 9 at/cm 3 .

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Carrier Lifetime Limitation of Industrial Ga-Doped Cz-Grown Silicon After Different Solar Cell Process Flows

Post

Niewelt

Kwapil

et al. 2022

IEEE J. Photovoltaics

View full text Add to dashboard Cite

show abstract

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Theory of lifetime spectroscopy

Cited by 1 publication

References 40 publications

Carrier Lifetime Limitation of Industrial Ga-Doped Cz-Grown Silicon After Different Solar Cell Process Flows

Carrier Lifetime Limitation of Industrial Ga-Doped Cz-Grown Silicon After Different Solar Cell Process Flows

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