Theory of linear sweep voltammetry with finite diffusion space

Aoki, Kumiko

doi:10.1016/0368-1874(83)80156-7

Cited by 9 publications

(14 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It was reported by Roth et al that the redox active moieties in monolayers can influence each other if they are in close proximity, thus leading to the observed broadening of the peak by the constant change of the environment the moieties are in, as well as diffusion of counter ions from and into the layer 12. A theoretical explanation has been given by Aoki et al, who derived a model for charge‐carrier diffusion inside a finite space 19. This model can explain the peak broadening as well as the nonlinear increase in peak separation with respect to the scan rate.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Covalent Layer‐by‐Layer Assembly of Redox Active Molecular Multilayers on Silicon (100) by Photochemical Thiol‐Ene Chemistry

Schulz

Nowak

Fröhlich

et al. 2011

Small

View full text Add to dashboard Cite

The fabrication of thin organic films covalently grafted onto silicon substrates is of significant interest, as they are expected to give access to a broad range of new materials for integration into microelectronic applications. Covalent layer-by-layer (LbL) assembly offers a high degree of freedom when designing such thin films. In this work an approach for the preparation of covalent redox active molecular multilayers on silicon (100) surfaces is presented using a highly branched decaallylferrocene and thiol-ene click chemistry. The multilayers are analyzed by ellipsometry, X-ray photoelectron sprectroscopy, and cyclic voltammetry. The results indicate that the multilayer growth is linear for at least sixteen layers and the density of ferrocenes per layer is in the range of 6 × 10⁻¹¹ mol cm⁻². Moreover, this method for LbL assembly is extended to surfaces which have been locally passivated by microcontact printing. By atomic force microscopy measurements it is possible to show that the covalent LbL deposition proceeds exclusively in the nonpassivated areas.

show abstract

Section: Resultsmentioning

confidence: 99%

“…This model can explain the peak broadening as well as the nonlinear increase in peak separation with respect to the scan rate. In theory, this model also allows the calculation of the rate constants of the redox reaction and diffusion processes inside the layer 19…”

Section: Resultsmentioning

confidence: 99%

Covalent Layer‐by‐Layer Assembly of Redox Active Molecular Multilayers on Silicon (100) by Photochemical Thiol‐Ene Chemistry

Schulz

Nowak

Fröhlich

et al. 2011

Small

View full text Add to dashboard Cite

show abstract

“…A plot of cD 1/2 e versus degree of cross-linking is shown in Fig. 4 [26][27][28]. The relative electron diffusion coefficient increases from 2.1 × 10 −9 ± 0.5 × 10 −9 mol/cm 2 sec 1/2 for films with 4 mol% EGDGE to 8.8 × 10 −9 ± 0.6 × 10 −9 mol/cm 2 sec 1/2 in films with 32 mol% EGDGE, however cD 1/2 e decreases to 6.9 × 10 −9 ± 0.7 × 10 −9 mol/cm 2 sec 1/2 for films with 43 mol% EGDGE.…”

Section: Effects Of Variable Cross-linking Concentrationmentioning

confidence: 99%

Electrochemical Characterization of Glucose Bioanodes Based on Tetramethylferrocene-Modified Linear Poly(ethylenimine)

Hickey

Halmes

Schmidtke

et al. 2014

Electrochimica Acta

View full text Add to dashboard Cite

“…At slower scan rates, all of the film can be electrochemically accessed as the diffusion layer thickness increases, approaching the MOF film boundary to reach a regime of finite diffusion. 42 In this regime, the current is given by:…”

Section: Electroactive Portion Of the Zr(ndi) Thin Filmmentioning

confidence: 99%

Enhancing Photovoltages at p-Type Semiconductors Through a Redox-active Metal-Organic Framework Surface Coating

Beiler¹,

McCarthy²,

Johnson³

et al. 2020

Preprint

View full text Add to dashboard Cite

Metal-organic frameworks (MOFs) interfaced with visible-light-absorbing semiconductors offer a novel approach to improve photoelectrochemical performances. When tested under 1-sun illumination, a naphthalene diimide (NDI)-based monolayer immobilized at p-type Si(111) undergoes two sequential one-electron reductions close to their thermodynamic potentials. No photovoltage is observed until the NDI monolayer is expanded in three dimensions in a PIZOF-type Zr(NDI) MOF (PIZOF = porous interpenetrated zirconium organic framework). The surface-grown MOF thin film promotes photo-induced charge separation and electron transfer across the interface and through the film, resulting in reduction of the molecular linkers at formal potentials >300 mV positive of their thermodynamic potentials. The apparent diffusion coefficient is similar to that measured at a conductive electrode (10-10 cm2 s-1), indicating that the observed photocurrent is governed by charge diffusion through the Zr(NDI) MOF film. The charges accumulated in the NDI-based MOF can be extracted by an external electron acceptor, demonstrating sufficient conductivity throughout the MOF film to power reductive transformations. When grown on GaP(100), the potentials of the NDI reductions in the MOF film are shifted anodically by >700 mV compared to those of the same MOF on conductive substrates. This photovoltage, among the highest reported for GaP in photoelectrochemical applications, illustrates the power of MOF thin films to improve photocathodic performance.

show abstract

Theory of linear sweep voltammetry with finite diffusion space

Cited by 9 publications

References 0 publications

Covalent Layer‐by‐Layer Assembly of Redox Active Molecular Multilayers on Silicon (100) by Photochemical Thiol‐Ene Chemistry

Covalent Layer‐by‐Layer Assembly of Redox Active Molecular Multilayers on Silicon (100) by Photochemical Thiol‐Ene Chemistry

Electrochemical Characterization of Glucose Bioanodes Based on Tetramethylferrocene-Modified Linear Poly(ethylenimine)

Enhancing Photovoltages at p-Type Semiconductors Through a Redox-active Metal-Organic Framework Surface Coating

Contact Info

Product

Resources

About