Theory of magnetoresistance in ferromagnetic junctions with a semimetal

Watanabe, Akio; Itoh, H.; Inoue, Jun–ichiro

doi:10.1016/j.jmmm.2003.12.1327

Search citation statements

Order By: Relevance

Paper Sections

Select...

Semimetal Junction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2006

Publication Types

Select...

Article1

Relationship

Self Cite1

Independent0

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The purpose of this section is to study the transport properties of FM/NM spacer/FM junctions, emphasizing on the role of the electronic states of the NM spacer in the MR effect of the junction. 19,97) …”

Section: Semimetal Junctionmentioning

confidence: 99%

Theory of Tunnel Magnetoresistance

Itoh¹,

Inoue²

2006

J. Magn. Soc. Jpn.

Self Cite

View full text Add to dashboard Cite

We present a review of theories of tunnel magnetoresistance (TMR) putting an emphasis on the role of electron scattering due to randomness. We adopt the linear response theory and generalize the conductance formula to calculate the electrical conductance in layered structures. The effect of randomness is treated in the coherent potential approximation and/or direct numerical simulation. Because the momentum conservation parallel to the junction planes does not hold in the presence of randomness, number of tunneling path through the barrier increases. Using a simple tight-binding model, we demonstrate first how the tunnel conductance and TMR are influenced by the randomness and by the shape of the Fermi surface of the metallic electrodes. The theory is applied to epitaxial tunnel junctions of Fe/MgO/Fe. It is shown that the basic concept of tunneling in the presence of randomness is also hold in realistic junctions. Magnetoresistance of tunnel junctions with semimetals and those with manganites is studied to clarify the effect of their electronic structures and interaction on TMR.

show abstract

Section: Semimetal Junctionmentioning

confidence: 99%