In addition to the photo-excited zero-resistance states and radiation-induced magnetoresistance oscillations, which can be observed in the high-quality GaAs/AlGaAs two-dimensional electron system (2DES), magnetotransport studies of this 2DES also exhibit interesting dark magnetoresistance effects. Here, a narrow negative magnetoresistance (MR) effect that appears around zero field, and spans over about À0.02 T B 0.02 T is examined. This experimental work aims to study the influence of microwave (MW) photoexcitation on this narrow negative-MR effect in high-mobility GaAs/AlGaAs 2DES. Experimental data exhibit that the observed negative magnetoresistance effect disappears with increasing MW power. For example, the change in magnetoresistance (ΔR xx ) due to the narrow negative-MR effect drops by %50% upon increasing the source power up to about 8 mW. Further analysis shows that the zero-field resistance monotonically increases with increasing the power, suggesting that electron heating due to the energy absorbed from the radiation field accounts for the observed quenching of the narrow negative-MR effect.