Theory of nonlinear microwave absorption in an electron-doped and gapped graphene monolayer

Margulis, V. A.; Muryumin, E. E.

doi:10.1016/j.physe.2021.114663

Cited by 1 publication

(2 citation statements)

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As we shall see further, we need to know both the linear surface conductivity σ (1) (ω) and the third-order nonlinear surface conductivity σ (3) (ω) ≡ σ (3) (−3ω; ω, ω, ω) in order to calculate the intensity of the third harmonic radiation generated in the reflected direction when the phosphorene layer is deposited on a dielectric substrate, such as SiO 2 . In deriving explicit expressions for those conductivities, we rely on the perturbative approach that we have used in our previous papers [45][46][47][48][49] dealing with graphene. Within the framework of the approach, equation ( 10) is solved iteratively in powers of the electric field amplitude E 0 up to the third order in E 0 .…”

Section: Theorymentioning

confidence: 99%

See 1 more Smart Citation

Unusual anisotropic behaviour of free-carrier-induced third-harmonic generation in phosphorene at microwave frequencies

Margulis¹,

Muryumin²

2021

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

We theoretically investigate the microwave third-harmonic generation (THG) produced by free carriers in the conduction band of electrostatically doped phosphorene. It is assumed that a plane polarized microwave of frequency ω is incident normally on the phosphorene layer deposited on a dielectric substrate. Using an extremely simple model for the phosphorene's anisotropic electronic structure, we calculate the power P(3ω) of the third harmonic wave generated in the reflected direction for the two principal cases of polarization of the incident radiation either along the 'armchair' (AC) direction or along the 'zigzag' (ZZ) one. Our results for P AC (3ω) and P ZZ (3ω) reveal an unusual anisotropy in the output THG power: the ratio P AC (3ω)/P ZZ (3ω) varies from values less than 1 to values greater than 1 with an increase in the frequency ω at a fixed value of the electron density n S controlled by an external gate voltage. The effect predicted may be useful in providing a THG functionality in microwave devices, such as frequency multipliers and up-convertors, needed for developing high data rate communication links.

show abstract

Section: Theorymentioning

confidence: 99%

“…[13]). In this case, as in the case of an electron-doped and gapped graphene monolayer [45][46][47][48][49], free mobile carriers can cause a substantial nonlinear microwave response of phosphorene due to its non-parabolic conduction band [50].…”

Section: Introductionmentioning

confidence: 99%