and Hofstadter's butterfl y. [ 10,11 ] In vertical stacked MoS 2 /WS 2 heterostructure which was fabricated by transferring MoS 2 fl akes to WS 2 fl akes, a new photoluminescence (PL) peak emerged after annealing in vacuum which is dictated by charge transfer and band normalization between the WS 2 and MoS 2 layers. [ 12 ] Also, indirect band gap peak of 15° twisted MoS 2 grown by chemical vapor deposition (CVD) method has a smaller redshift due to the larger interlayer distance compared to the ones of AA and AB stacked MoS 2 . [ 13 ] Although WS 2 has a similar atomic structure to MoS 2 , very different properties have been shown, such as larger valence band splitting of WS 2 (0.41 eV) [ 14 ] than MoS 2 (0.16 eV). [ 1,15 ] Also, the degree of circular polarization of A exciton emission under near-resonant excitation is around 95% in WS 2 bilayer [ 16 ] in contrast to 10%−30% in MoS 2 bilayer. [ 17 ] In this paper, we demonstrate the observation of WS 2 bilayers and trilayers with various twist angles on quartz plates by CVD method. The twisted bilayers have much intensive PL compared to both monolayers and untwisted bilayers (AA and AB stackings) and the absence of indirect transition peak. This implies that the random twisted WS 2 bilayer possesses a quasidirect band gap behavior as a result of weakened coupling due to enlarged interlayer distance.
Experimental ResultsOur samples were growth by CVD method at 1100 °C using the setup shown in Figure 1 a. A magnet was applied to push the sulfur source in the furnace (see details in the Experimental Section). Bilayer WS 2 with twist angles of 0°, 13°, 30°, 41°, 60°, and 83° were observed from one experiment and on the same substrate as shown in Figure 1 b-g. The twist angle is defi ned by rotation of upper layer related to the lower layer at counterclockwise direction. We can see that the smaller upper monolayer WS 2 triangle is twisted to different angles in related to the bigger lower monolayer WS 2 in each sample.Monolayer WS 2 is a direct band gap material, whereas WS 2 bilayers with AA or AB stacking are known to have an indirect band gap due to the interlayer electronic coupling. [ 18,19 ] However, as the symmetry between upper and lower layer is broken, the random twisted WS 2 bilayer samples are expected to have Interlayer electronic and mechanical couplings of transitional metal dichalcogenides due to Van der Waals force determine their band structure and Raman modes evolution, respectively. Twist-stacked WS 2 bilayers have been synthesized with twist angles of 0°, 13°, 30°, 41°, 60°, and 83° via chemicalvapor depositon, which allows us to study the coupling effect by Raman and photoluminescence spectroscopy and density function calculation. The photoluminescence property implies that these random-twisted WS 2 bilayers behave as quasi-direct bandgap material due to weakened interlayer coupling as a result of larger interlayer distances than the nontwisted 0° and 60° stacked WS 2 bilayers (with an indirect band gap). In addition, an additional small peak (A...