We present a finite-temperature diagrammatic perturbation theory of third harmonic generation (THG) in doped graphene. We carry out calculations of the third-order conductivity in the scalar potential gauge, highlighting a subtle cancellation between a Fermi surface contribution, which contains only power laws, and power-law contributions of inter-band nature. Only logarithms survive in the final result. We conclude by presenting quantitative results for the up-conversion efficiency at zero and finite temperature. Our results shed light on the on-going dispute over the dependence of THG on carrier concentration in graphene.Introduction.-The non-linear optical properties of graphene 1 , the most studied two-dimensional (2D) material, are beginning to attract considerable interest. Using four-wave mixing, Hendry et al. 2 demonstrated experimentally that the third-order optical susceptibility of graphene is remarkably large (≈ 1.4 × 10 −15 m 2 /V 2 ) and only weakly dependent on wavelength in the nearinfrared frequency range. Third harmonic generation (THG) from mechanically exfoliated graphene sheets has been measured by Kumar et al. 3 who extracted a value of the third-order susceptibility on the order of 10 −16 m 2 /V 2 for an incident photon energy ω = 0.72 eV. Finally, Hong et al. 4 reported strong THG in graphene grown by chemical vapor deposition, in the situation in which the incident photon energy ω = 1.57 eV is in three-photon resonance with the exciton-shifted van Hove singularity.