Theory of Point Defect Annealing in Metals

Abstract

The kinetics of the annealing of point defects, either by migration to sinks or by recombination, is complicated by the occurrence of a variety of simultaneous r e x t i o n s. An extensive theoretical study of annealing processes is in progress at Brookhaven based on the isolation and combination of siaple kinetic steps. solutions have been used to obtain useful approximations and t o deternine their regions of validity. have bcen studied; the simultaneous annealing of single and divacancies, and the annealing of stngle vacancies with impurity trapping. Three reconbination reactions have been investigated; vacancy-interstitial elmihilation with interstitial migration to sinks, di-interstitial formation, and interstitial trapping at Lmpurities. When analytic solutions could not be found, computer Two migration reaction schemes *

Amorphous physics and materials: Interstitialcy theory of condensed matter states and its application to non-crystalline metallic materials

“…While vacancies (Frenkel's "holes") are intuitively rather simple to understand, the atomic structure of interstitials was highly debated until the beginning of the 70 s of the past century. [29,30] Before this time, it had been assumed that interstitials occupy the octahedral cavity in the FCC structure (i.e., in the center of the elementary cell). However, Seitz [31] considered in 1950 "an interstitial atom which moves by jumping into a normal lattice site and forces the atom that is there into a neighboring interstitial site" and called it an "interstitialcy".…”

“…First of all, this concerns its formation entropy S i . Up to the middle of the 70s and even later it was assumed that S i is rather negative, [30,44] in contrast to the positive formation entropy of vacancies S v . Since the interstitial formation enthalpy H i is several times bigger than the vacancy formation enthalpy H v , [36,39] one can conclude that the interstitialcy formation Gibbs free energy, 𝒢 i = H i − T S i , should be much bigger than that for the vacancy, 𝒢 v = H v − T S v , and, therefore, the equilibrium concentration of vacancies c…”

Irrecoverable and Recoverable Resistivity Resulting From the First Order Magnetic-Structural Phase Transition in Gd<formula formulatype="inline"> <tex Notation="TeX">$_5$</tex></formula>(Si<formula formulatype="inline"> <tex Notation="TeX">$_x$</tex></formula>Ge<formula formulatype="inline"><tex Notation="TeX">$_{1-x}$</tex></formula>)<formula formulatype="inline"><tex Notation="TeX">$_4$</tex></formula>

“…3. Damask [1963] described the recovery in resistivity of quenched metals such as gold when annealed at temperatures much lower than the quenching temperature. They stated that the resistivity recovery occurred in quenched gold was due to annihilation of defects such as vacancies and dislocations caused by quenching.…”

Concentrations and diffusion coefficients of thermal equilibrium point defects in silicon crystals

“…Such studies have been performed extensively in the case of metals. 1,2) The difficulties in the case of Si crystal compared with metals come from the following three reasons:…”