1994
DOI: 10.1103/physrevb.49.4800
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Theory of potential modulation in lateral surface superlattices

Abstract: We have calculated the piezoelectric coupling between a two-dimensional electron gas and the stress field due to a lateral surface superlattice, a periodic striped gate. The stress is assumed to arise from differential contraction between the metal gate and semiconductor. The piezoelectric potential is several times larger than the deformation potential and generally gives the dominant coupling. It depends on the orientation of the device and vanishes on a (100) surface if current flows parallel to a crystallo… Show more

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Cited by 123 publications
(83 citation statements)
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“…We neglect the small bending in electrostatic calculations, but save the bound charge determined by (16) and (17) at 0 ≤ l ≤ L and put it zero otherwise. Using these simplifications, we can estimate the screening charge density using the method of images as follows:…”
mentioning
confidence: 99%
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“…We neglect the small bending in electrostatic calculations, but save the bound charge determined by (16) and (17) at 0 ≤ l ≤ L and put it zero otherwise. Using these simplifications, we can estimate the screening charge density using the method of images as follows:…”
mentioning
confidence: 99%
“…To estimate δn, we neglect the last term in (18), use the model of pure electrostatic screening [16] and consider the 2DEG as having constant electrical potential δφ ext + δφ resp = 0. This assumption is reasonable if…”
mentioning
confidence: 99%
“…When the cantilever bends, the 2DEG density changes in such a way as to maintain constant electrochemical potential. However, to simplify the calculations, we use the pure electrostatic screening model (Davies and Larkin, 1994) and consider the 2DEG as a media having a constant electrical potential. As shown in Shevyrin et al (2016), this simplification is reasonable if the cantilever thickness far exceeds the Bohr radius a B = 4π 0 2 m −1 e −2 ≈ 13 nm (here m is an electron effective mass and e is the elementary charge).…”
Section: Model Descriptionmentioning
confidence: 99%
“…Typically, at helium temperatures, they have electron densities of 3 to 5 x 10 15 m-2 , mobilities of 60 to 80 m 2 V-1 s-1 , and electron mean free paths of 6 to 8 m. The 2DEG is formed at a (AlGa)As/GaAs heterointerface 35 nm to 50 nm beneath the surface of the heterostructure. When ferromagnetic stripes and gratings are used they are orientated normal to the [100] GaAs crystal direction, which is non-piezoelectric, to minimise any strain-induced electric modulation at the 2DEG due to the differential thermal contraction of the ferromagnet and the GaAs [24]. We will consider the 2DEG to lie in the x-y plane and the current to flow in the x-direction.…”
Section: Hybrid Ferromagnetic/semiconductor Devicesmentioning
confidence: 99%