Theory of Quantum Transport in a Two-Dimensional Electron System under Magnetic Fields. I. Characteristics of Level Broadening and Transport under Strong Fields

Ando, Tsuneya; Uemura, Yasutada

doi:10.1143/jpsj.36.959

Cited by 726 publications

(357 citation statements)

References 12 publications

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“…Figure 2(c) shows a two-dimensional plot of the density of states in the space of magnetic field and the carrier density. For simplicity, we assume that each Landau level is broadened into a Gaussian shape with width E = C B , 24,65 where the constant C is taken to be 0.03. The dark and light shading (dark and bright colors) represent low and high densities of states, respectively.…”

Section: N=0mentioning

confidence: 99%

Landau level spectra and the quantum Hall effect of multilayer graphene

2011

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The Landau level spectra and the quantum Hall effect of ABA-stacked multilayer graphenes are studied in the effective-mass approximation. The low-energy effective-mass Hamiltonian may be partially diagonalized into an approximate block-diagonal form, with each diagonal block contributing parabolic bands except for an additional block describing Dirac-like bands with a linear dispersion in a multilayer with an odd number of layers. We fully include the band parameters and, taking into account the symmetry of the lattice, we analyze their effect on the block-diagonal Hamiltonian. Next-nearest-layer couplings are shown to be particularly important in determining the low-energy spectrum and the phase diagram of the quantum Hall conductivity by causing energy shifts, level anticrossings, and valley splitting of the low-lying Landau levels.

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Section: N=0mentioning

confidence: 99%

Landau level spectra and the quantum Hall effect of multilayer graphene

2011

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“…In a magnetic field transverse to the 2D electron array electron states are confined to the Landau levels (LL) with a width Á. The contribution [13][14][15] to Á from scattering is…”

Section: Theorymentioning

confidence: 99%

Magnetoresistivity of a Weakly-Screened, Low-Density, Two-Dimensional Electron Liquid

Karakurt

Dahm

2013

J. Phys. Soc. Jpn.

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We probe the strength of electron-electron interactions at intermediate magnetic fields in the classical regime using magnetoconductivity measurements of two-dimensional, non-degenerate electrons on liquid helium. We span both the independent-electron regime, where the data are qualitatively described by the self-consistent Born approximation (SCBA), and the strongly-interacting electron (Drude) regime. We observe a crossover from SCBA to Drude theory at finite magnetic fields as a function of electron density. The SCBA magnetoresistance is found to be density dependent. Our data confirm the theory for magnetoresistivity in a weakly screened, two-dimensional electron gas, and demonstrate that electron-electron interactions are important to very low densities.

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“…The Zeeman energy at 15 T corresponds to E Z = 1.73 meV (assuming a g-factor of 2.0 for the 2DEG and ignoring the oscillatory enhancement of the g-factor [9]), which exceeds the thermal energy of k B T = 7.6 µeV at 100 mK by many orders. The spacing between the Landau levels at 15 T is given by ℏω c = 17.15 meV, which is the dominant energy scale.…”

Section: Energy Scalesmentioning

confidence: 99%

Overlapping-Gate Architecture for Silicon Hall Bar MOSFET Devices in the Low Electron Density and High Magnetic Field Regime

Beveren

Tan

Lai

et al. 2011

MSF

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Abstract.A common issue in low temperature measurements of enhancement-mode metal-oxidesemiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that case a voltage bias applied across the source and drain contact of a Hall bar MOSFET will mostly fall across the contacts (and not across the channel) and therefore magneto-transport measurements become challenging. However, from a physical point of view, the study of MOSFET nanostructures in the low electron density regime is very interesting (impurity limited mobility [1], carrier interactions [2,3] and spin-dependent transport [4]) and it is therefore important to come up with solutions [5,6] that work around the problem of a high contact resistance in such devices (c.f. Fig. 1 (a)).

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Theory of Quantum Transport in a Two-Dimensional Electron System under Magnetic Fields. I. Characteristics of Level Broadening and Transport under Strong Fields

Cited by 726 publications

References 12 publications

Landau level spectra and the quantum Hall effect of multilayer graphene

Landau level spectra and the quantum Hall effect of multilayer graphene

Magnetoresistivity of a Weakly-Screened, Low-Density, Two-Dimensional Electron Liquid

Overlapping-Gate Architecture for Silicon Hall Bar MOSFET Devices in the Low Electron Density and High Magnetic Field Regime

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