Theory of substrate, Zeeman, and electron-phonon interaction effects on the quantum capacitance in graphene

Tahir, M.; Sabeeh, K.; Shaukat, A.; Schwingenschlögl, Udo

doi:10.1063/1.4842755

Cited by 3 publications

(1 citation statement)

References 61 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Moreover, in a strong magnetic field case, the Zeeman splitting cannot be neglected and it has already been demonstrated in the quantum capacitance measurements. [30,31] By taking these two factors into account, we have shown that there are abundant quantum Hall phases emerging in the system, depending on the system parameters. When M < ∆ , the quantum valley Hall (QVH) phase appears, with the edge states from opposite valleys propagating in opposite transverse edges.…”

Section: Introductionmentioning

confidence: 99%

Spin-valley quantum Hall phases in graphene

Hong-Yu¹

2015

Chinese Phys. B

View full text Add to dashboard Cite

We theoretically investigate possible quantum Hall phases and corresponding edge states in graphene by taking a strong magnetic field, Zeeman splitting M, and sublattice potential ∆ into account but without spin-orbit interaction. It was found that for the undoped graphene either a quantum valley Hall phase or a quantum spin Hall phase emerges in the system, depending on relative magnitudes of M and ∆ . When the Fermi energy deviates from the Dirac point, the quantum spin-valley Hall phase appears and its characteristic edge state is contributed only by one spin and one valley species. The metallic boundary states bridging different quantum Hall phases possess a half-integer quantized conductance, like e 2 /2h or 3e 2 /2h. The possibility of tuning different quantum Hall states with M and ∆ suggests possible graphene-based spintronics and valleytronics applications.

show abstract

Section: Introductionmentioning

confidence: 99%

Spin-valley quantum Hall phases in graphene

Hong-Yu¹

2015

Chinese Phys. B

View full text Add to dashboard Cite

show abstract

A general analytical method for finding the quantum capacitance of graphene

Selvaggi

2018

J Comput Electron

View full text Add to dashboard Cite

Analytical carrier density and quantum capacitance for graphene

Wang

et al. 2016

Applied Physics Letters

View full text Add to dashboard Cite

A disorder based analytical carrier density for graphene is presented here. The carrier density, a basic property of all semiconductors, is obtained based on exponential distribution describing the potential fluctuations induced by impurities and shows good agreement with numerical results. The quantum capacitance is subsequently derived from the carrier density, with a good agreement with experimental measurements. A method for extracting the gate coupling function is also proposed, which relates the internal surface potential with the external applied gate voltage. The essential properties of graphene device physics, such as the temperature, material disorder, and surface potential dependences, are captured in these analytical equations.

show abstract

Theory of substrate, Zeeman, and electron-phonon interaction effects on the quantum capacitance in graphene

Abstract: Theory of substrate, Zeeman, and electron-phonon interaction effects on the quantum capacitance in graphene KAUST Repository

Cited by 3 publications

References 61 publications

Spin-valley quantum Hall phases in graphene

Spin-valley quantum Hall phases in graphene

A general analytical method for finding the quantum capacitance of graphene

Analytical carrier density and quantum capacitance for graphene

Contact Info

Product

Resources

About