Theory of surface photovoltage in a semiconductor with a Schottky contact

Choo, S.C.

doi:10.1016/0038-1101(95)00035-r

Cited by 4 publications

(8 citation statements)

References 11 publications

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“…Similar results have also been obtained by Jang using a somewhat different approach [87]. Finally, Choo has studied numerically both the free surface SPV [77] and the metal±semiconductor interface SPV [80], and concluded that typically the FQL approximation is considerably more satisfactory in the former than in the latter.…”

Section: Super-bandgap Spvsupporting

confidence: 73%

“…If the quasi-Fermi levels are¯at across the SCR, Eq. (2.64) is equivalent to the ansatz of Chiang and Wagner and the latter is therefore a reasonable approximation for metal± semiconductor interfaces, as also con®rmed by numerical simulations [80].…”

Section: Super-bandgap Spvsupporting

confidence: 57%

“…While the free surface current is of a SRH-type recombination current, the metal±semiconductor interface current is associated with thermionic emission. From thermionic emission considerations, an effective interface recombination rate in the form of R n v n n and R p v p p is deduced [80], where v n v p is the effective recombination velocity for electrons (holes). This formulation is based on the combined thermionic emission-diffusion approach of Crowell and Sze [81], extended by Green and Shewchun [82] to minority carriers.…”

Section: Super-bandgap Spvmentioning

confidence: 99%

“…Heasell [84] has shown that the majority carrier quasi-Fermi level may considerably deviate from¯atness near the semiconductor± metal interface, in order to supply the current necessary to support the thermionic emission across the interface. Choo [80] has shown that even if the minority carrier quasi-Fermi level is reasonably¯at across most of the SCR, it may undergo signi®cant variations near the SCR edge, to the point of causing order-of-magnitude errors in current calculations.…”

Section: Super-bandgap Spvmentioning

confidence: 99%

“…Recent studies have applied the current balance equation (Eq. (2.62)) for both minority and majority carriers [79,80]. In such studies the Poisson equation is circumvented by assuming a potential pro®le in the SCR, usually a parabolic one.…”

Section: Super-bandgap Spvmentioning

confidence: 99%

See 4 more Smart Citations

Surface photovoltage phenomena: theory, experiment, and applications

Kronik

Shapira

1999

Surface Science Reports

1,529

804

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Section: Super-bandgap Spvsupporting

confidence: 73%

Section: Super-bandgap Spvsupporting

confidence: 57%

Section: Super-bandgap Spvmentioning

confidence: 99%

Section: Super-bandgap Spvmentioning

confidence: 99%

Section: Super-bandgap Spvmentioning

confidence: 99%

See 3 more Smart Citations

Surface photovoltage phenomena: theory, experiment, and applications

Kronik

Shapira

1999

Surface Science Reports

1,529

804

View full text Add to dashboard Cite

Physical understanding and technological control of carrier lifetimes in semiconductor materials and devices: A critique of conceptual development, state of the art and applications

Khanna

2005

Progress in Quantum Electronics

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Simultaneously Solving the Photovoltage and Photocurrent at Semiconductor–Liquid Interfaces

Iqbal

Bevan

2017

J. Phys. Chem. C

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In this work, we present a general theoretical and numerical approach for simultaneously solving the photovoltage and photocurrent at semiconductor−liquid interfaces. Our methodology extends drift-diffusion methods developed for metal−semiconductor Schottky contacts in the device physics community into the domain of semiconductor− liquid "pseudo-Schottky" contacts. This model is applied to the study of photoelectrochemical anodes, utilized in the oxidative splitting of water. To capture both the photovoltage and photocurrent at semiconductor−liquid interfaces, we show that it is necessary to solve both the electron and hole current continuity equations simultaneously. The electron continuity equation is needed to primarily capture the photovoltage formation at photoanodes, whereas the hole continuity equation must be solved to obtain the photocurrent. Both continuity equations are solved through coupled recombination and generation terms. Moreover, to capture charge transfer at the semiconductor−liquid interface, floating (Neumann) boundary conditions are applied to the electron and hole continuity equations. As a model system, we have studied the illuminated hematite photoanode, where it is shown that our approach can capture band flattening during the formation of a photovoltage, as well as the photocurrent onset and saturation. Finally, the utility of this methodology is demonstrated by correlating our theoretical calculations with photocurrent measurements reported in the literature. In general, this work is intended to expand the scope of photocatalytic device design tools and thereby aid the optimization of solar fuel generation.

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Theory of surface photovoltage in a semiconductor with a Schottky contact

Cited by 4 publications

References 11 publications

Surface photovoltage phenomena: theory, experiment, and applications

Surface photovoltage phenomena: theory, experiment, and applications

Physical understanding and technological control of carrier lifetimes in semiconductor materials and devices: A critique of conceptual development, state of the art and applications

Simultaneously Solving the Photovoltage and Photocurrent at Semiconductor–Liquid Interfaces

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