Theory of Temperature Dependent EPR Linewidth in Semimagnetic Semiconductors

Electron paramagnetic resonance studies of magnetic interactions in Hg1-xMnxSe

“…The values of the fitting parameters are shown in table 1. In the paper by Aliev and Tagirov (1985) the temperature dependence of the EPR linewidth in Hgl-.Mn,Se with x = 0.06 was analysed. It was concluded that above 40 K the EPR linewidth can be fitted to a formula AH (T) = a + bT + c/T, where the dominant temperature-dependent term is c/T, which is in accordance with our result.…”

EPR Linewidth in Pb1−xMnxTe

“…Usually one associates a linewidth with the relaxation rate only, but it is possible that EPR lines are inhomogeneously broadened. We based our analysis of the temperature dependence of linewidth on the idea proposed by Aliev and Tagirov [15]. At sufficiently high temperature (hw < kT, for 10 GHz T >> 0.5 K) the temperature dependence of the linewidth can be approximated by [15] (5) c AH,,(T) = Hr + bT + r i where H , is the temperature independent residual linewidth, b the temperature coefficient of the Korringa relaxation, and c/T describes the contribution of the inhomogeneous broadening narrowed by cross-relaxation through the carriers under bottleneck conditions.…”

“…The E P R lineshape was fitted numerically considering that it is due to the mixture of the dispersive and absorptive parts of the magnetic susceptibility. We interpret the temperature dependence of the linewidth using the idea proposed by Aliev and Tagirov [15]. We estimate the approximate value of the exchange constant between localized magnetic ions and carriers by measuring its effect on the EYR linewidth.…”