1976
DOI: 10.1088/0022-3719/9/12/013
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Theory of the temperature dependence of electronic band structures

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Cited by 364 publications
(365 citation statements)
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“…The temperature dependence of E g in a semiconductor or insulator can be explained by the sum of two distinct mechanisms: thermal expansion of the lattice and the electron-phonon interaction. 23,24 In the case of CdTe, it is known that the lattice dilatation effect contributes more to the bandgap shift than the electron-phonon interaction above 100 K, while below 100 K the electron-phonon interaction is responsible for the energy shift. 23,25 The PL peak centered near 530 nm, which is thought to be caused by an interband transition, varied within a range of energies between the indirect and direct E g values (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…The temperature dependence of E g in a semiconductor or insulator can be explained by the sum of two distinct mechanisms: thermal expansion of the lattice and the electron-phonon interaction. 23,24 In the case of CdTe, it is known that the lattice dilatation effect contributes more to the bandgap shift than the electron-phonon interaction above 100 K, while below 100 K the electron-phonon interaction is responsible for the energy shift. 23,25 The PL peak centered near 530 nm, which is thought to be caused by an interband transition, varied within a range of energies between the indirect and direct E g values (Fig.…”
Section: Resultsmentioning
confidence: 99%
“…These effects vary markedly depending on whether the temperature T is larger or smaller than the Fermi temperature T F (typically a few eV). At "cool" temperatures, where T is much smaller than T F , electrons are nearly degenerate, and Fermi factors and excitations such as phonons dominate the thermal behavior [1][2][3]. In contrast thermal occupations become nearly semi-classical and electronic excitations such as plasmons become important in the warm-dense-matter (WDM) regime, where T is of order T F or larger, and condensed matter is partially ionized.…”
mentioning
confidence: 99%
“…4(b)]. This redshift, which is analogous to the temperature-induced renormalization of the electronic band gap [13], can be expressed in the harmonic approximation as…”
mentioning
confidence: 99%