Theory of the Transport Properties in Graphite

Ono, Shûsuke; Sugihara, Kō

doi:10.1143/jpsj.21.861

Cited by 121 publications

(57 citation statements)

References 9 publications

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“…3b reaches a roughly n-independent value (at least for positive V g ) we may identify this limiting behavior with exclusively phonon scattering and derive an upper bound value for D. For n = +2 × 10 11 cm −2 (electrons) Eq. (1) yields D ∼ 29 eV, consistent with D = 10 − 30 eV in graphite [8,25] and comparable to D ∼ 17 eV, reported for unsuspended graphene [11]. In contrast, for n = −2 × 10 11 cm −2 (holes) we obtain D ∼ 50 eV.…”

supporting

confidence: 88%

Temperature-Dependent Transport in Suspended Graphene

et al. 2008

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The resistivity of ultra-clean suspended graphene is strongly temperature (T ) dependent for 5 K< T < 240 K. At T ∼ 5 K transport is near-ballistic in a device of ∼ 2 µm dimension and a mobility ∼ 170, 000 cm 2 /Vs. At large carrier density, n > 0.5×10 11 cm −2 , the resistivity increases with increasing T and is linear above 50 K, suggesting carrier scattering from acoustic phonons. At T = 240 K the mobility is ∼ 120, 000 cm 2 /Vs, higher than in any known semiconductor. At the charge neutral point we observe a non-universal conductivity that decreases with decreasing T , consistent with a density inhomogeneity <10 8 cm −2 .

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confidence: 88%

Temperature-Dependent Transport in Suspended Graphene

et al. 2008

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“…3(b) reaches a roughly n-independent value (at least for positive V g ), we may identify this limiting behavior with exclusively phonon scattering and derive an upper bound value for D. For n 2 10 11 cm ÿ2 (electrons) Eq. (1) yields D 29 eV, consistent with D 10-30 eV in graphite [8,22] and comparable to D 17 eV, reported for unsuspended graphene [11]. In contrast, for n ÿ2 10 11 cm ÿ2 (holes) we obtain D 50 eV.…”

Section: Prl 101 096802 (2008) P H Y S I C a L R E V I E W L E T T Esupporting

confidence: 88%

“…where D is the deformation potential, m 7:6 10 ÿ8 g=cm 2 is the graphene mass density, v ph 2 10 4 m=s is the LA phonon velocity [22], and v F 1 10 6 m=s is the Fermi velocity [1]. While our data in Fig.…”

Section: Prl 101 096802 (2008) P H Y S I C a L R E V I E W L E T T Ementioning

confidence: 81%

Flatland exposed

Crespi¹

2008

Physics

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The resistivity of ultraclean suspended graphene is strongly temperature (T) dependent for 5 < T < 240 K. At T 5 K transport is near-ballistic in a device of 2 m dimension and a mobility 170 000 cm 2 =V s. At large carrier density, n > 0:5 10 11 cm ÿ2 , the resistivity increases with increasing T and is linear above 50 K, suggesting carrier scattering from acoustic phonons. At T 240 K the mobility is 120 000 cm 2 =V s, higher than in any known semiconductor. At the charge neutral point we observe a nonuniversal conductivity that decreases with decreasing T, consistent with a density inhomogeneity <10 8 cm ÿ2 .

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“…(2) for τ used in the literature 26,31 . This discrepancy leads, in part, to the large range of deformation potential values from D ac =10 eV to 30 eV quoted in the literature [32][33][34][35][36] . In addition, uncertainty in the sound velocity can also contribute to the spread of the values of the deformation potentials.…”

Section: Low-field Mobilitymentioning

confidence: 95%

Inelastic scattering and current saturation in graphene

2010

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We present a study of transport in graphene devices on polar insulating substrates by solving the Bolzmann transport equation in the presence of graphene phonon, surface polar phonon, and Coulomb charged impurity scattering. The value of the saturated velocity shows very weak dependence on the carrier density, the nature of the insulating substrate, and the low-field mobility, varied by the charged impurity concentration. The saturated velocity of 4 -8 × 10 7 cm/s calculated at room temperature is significantly larger than reported experimental values. The discrepancy is due to the self-heating effect which lowers substantially the value of the saturated velocity. We predict that by reducing the insulator oxide thickness, which limits the thermal conductance, the saturated currents can be significantly enhanced. We also calculate the surface polar phonon contribution to the low-field mobility as a function of carrier density, temperature, and distance from the substrate.

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Theory of the Transport Properties in Graphite

Cited by 121 publications

References 9 publications

Temperature-Dependent Transport in Suspended Graphene

Temperature-Dependent Transport in Suspended Graphene

Flatland exposed

Inelastic scattering and current saturation in graphene

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