1988
DOI: 10.1002/aic.690340602
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Theory of transport processes in single crystal growth from the melt

Abstract: The quality of large semiconductor crystals grown from the melt for USE! in electronic and optoelectronic devices is strongly influenced by the intricate coupling of heat and mass transfer and melt flow in growth systems. This paper reviews the present state of understanding of these processes starting from the simplest descriptions of solidification processes to detailed numerical calculations needed for quantitative modeling of processing with solidification. Descriptions of models for the vertical Bridgman-… Show more

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Cited by 291 publications
(115 citation statements)
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References 164 publications
(137 reference statements)
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“…The precise multiplicative decomposition of the fliot number (q, into q, and ( is unimportant since in the final results, only the product fql appears. The same is true for fq 2 , f q 1 , and fq2,.…”
Section: (11b)supporting
confidence: 49%
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“…The precise multiplicative decomposition of the fliot number (q, into q, and ( is unimportant since in the final results, only the product fql appears. The same is true for fq 2 , f q 1 , and fq2,.…”
Section: (11b)supporting
confidence: 49%
“…The concentration of solute (one of the two components of the binary mixture) at the top of the cylinder , = h is c = c 2 . The top of the cylinder is maintained at temperature P = T. 2 , while the bottom of the cylinder is at temperature T = T 1 , which is significantly smaller than the melting temperature To of a planar interface. The density of the melt is assumed to be A = Oo at temperature to and concentration c 2 .…”
Section: Mathematical Modelmentioning
confidence: 99%
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