Theory of tunneling recombination of defects stimulated by their motion I. General formalism

Doktorov, A.B.; Kotomin, E. A.

doi:10.1002/pssb.2221140102

Cited by 41 publications

(30 citation statements)

References 85 publications

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“…The unifying characteristics of these materials is topological disorder as observed, for example, in solids with randomly situated traps such as found in various amorphous semiconductors. A wealth of studies is available on this subject, and its understanding is in fact much more mature than in the case of (In,Ga)N [60][61][62][63][64][65][66][67]. For example, the impact of carrier diffusion on the PL decay has been studied in great detail already decades ago [62].…”

Section: Analysis and Simulation Of The Pl Decay Over The Full Timmentioning

confidence: 99%

Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency

et al. 2017

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We investigate the radiative and nonradiative recombination processes in planar (In,Ga)N/GaN(0001) quantum wells and (In,Ga)N quantum disks embedded in GaN(0001) nanowires using photoluminescence spectroscopy under both continuous-wave and pulsed excitation. The photoluminescence intensities of these two samples quench only slightly between 10 and 300 K, which is commonly taken as evidence for high internal quantum efficiencies. However, a side-by-side comparison shows that the absolute intensity of the Ga-polar quantum wells is two orders of magnitude higher than that of the N-polar quantum disks. A similar difference is observed for the initial decay time of photoluminescence transients obtained by time-resolved measurements, indicating the presence of a highly efficient nonradiative decay channel for the quantum disks. In apparent contradiction to this conjecture, the decay of both samples is observed to slow down dramatically after the initial rapid decay. Independent of temperature, the transients approach a power law for longer decay times, reflecting that recombination occurs between individual electrons and holes with varying spatial separation. Employing a coupled system of stochastic integro-differential equations taking into account both radiative and nonradiative Shockley-Read-Hall recombination of spatially separate electrons and holes as well as their diffusion, we obtain simulated transients matching the experimentally obtained ones. The results reveal that even dominant nonradiative recombination conserves the power law decay for (In,Ga)N/GaN{0001} quantum wells and disks.

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Section: Analysis and Simulation Of The Pl Decay Over The Full Timmentioning

confidence: 99%

Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency

et al. 2017

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“…The quenching of pheophytin a fluorescence, by toluquinone in different solvents, was analyzed under pulsed and stationary photoexcitation. The results were compared with the theoretically calculated reaction radius [59] for the exponential model of the ionization rate (2.22): (4.15) where where C is the Eiler constant and K ( x ) and Z(x) are the modified Bessel functions. The best fit to the experimental data shown in Fig.…”

Section: B Differential Encounter Theorymentioning

confidence: 99%

Unified Theory of Photochemical Charge Separation

Burshteǐn

2000

Advances in Chemical Physics

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“…It is well known that bimolecular reactions in the liquid matter are significantly affected by the presence of chemically inert solvent. To consider the influence of the solvent on diffusion-affected reactions, we make use of a conventional simplification 38,39 dividing the problem into two parts: the reaction event rate theory and the theory of reactant mobility affected processes. The type of motion (random walks) and the rates of the elementary reaction events are determined by the matter.…”

Section: Reactivity and Free Motion Operatorsmentioning

confidence: 99%

The integral encounter theory of multistage reactions containing association–dissociation reaction stages : Part I. Kinetic equations

Ivanov

Lukzen

Kipriyanov

et al. 2004

Phys. Chem. Chem. Phys.

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Theory of tunneling recombination of defects stimulated by their motion I. General formalism

Cited by 41 publications

References 85 publications

Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency

Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency

Unified Theory of Photochemical Charge Separation

The integral encounter theory of multistage reactions containing association–dissociation reaction stages : Part I. Kinetic equations

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