“…[1], using the approximation of large diffusion lengths classically used in semiconductors, to show that the expression of the gain can be reduced to an expression of the form of equation (1) with new expressions for ξ 0 and k 0 2 that we derive. In every step of the calculations we compare the numerical results obtained with our expressions to the ones obtained without approximation with the general expressions of reference [1] (after correction of a typographical errors in formula (45) of Ref. [1]) to validate our expressions and our results.…”