Therapeutic carbon-ion effects on monolithic active pixel sensor with 130 nm high-resistivity process

Abstract

A Monolithic Active Pixel Sensor (MAPS) is currently being designed in a new 130 nm high-resistivity (>1 kΩ·cm) CMOS process for full image beam monitoring in the carbon-ion therapeutic facility. The charge sensing node collects the charge deposited by the carbon ions that pass through the MAPS. A 3-dimensional TCAD model of the pixel has been established to study the carbon-ion induced process in the MAPS. This paper will discuss the thickness of the depletion layer, the charge collection efficiency, the charge collection time, and the characteristics of NMOS devices with different bias voltages and carbon-ion hitting locations.

Advances in nuclear detection and readout techniques

“…In addition, applying a reverse bias voltage to the substrate could expand the depletion layer region which means increasing CCE and improving radiation hardness, but it may also cause the peripheral readout circuit on the same substrate not to work properly, so deep Nwell is needed for protection. Simulations can give the preliminary study of charge collection in certain process for specific particles in the early phase of design [32][33][34]. In summary, the prevailing approach for MAPS involves the utilization of a complete quadra-well process (Fig.…”

Study of MIPs effects on a MAPS for electron ion collider in China

“…The first is a customized process with Quadruple-well High-Resistivity (>1kΩ cm). Carbon-ion induced effects on this process have been studied in [6]. In addition, considering the cost, the availability, and the tape-out duration, the second is a commercial process with Twin-well Low-Resistivity (<50 Ω cm).…”