Thermal Activation of Plastic Deformation of Undoped GaAs between 528 and 813 K

Astié, Pierre; Couderc, Jean-Jacques; Chomel, P.; Quélard, D.; Duseaux, M.

doi:10.1002/pssa.2210960127

Cited by 23 publications

(16 citation statements)

References 21 publications

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“…The x =0.25 curve is the best fit to the points shown with 17 = 1.0 eV: There are no experimental data on the cutoff temperature. Both energies are in the range of Peierls energies for semiconductors 17 and show that Eq. (2) gives a first-order description of the rise in critical thickness with temperature.…”

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confidence: 70%

Critical-thickness and growth-mode transitions in highly strained In_{x}Ga_{1-x}As films

Price¹

1991

Phys. Rev. Lett.

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Singular phenomena in highly strained In x Gaix As are used to test current theories of dislocation dynamics in thin films. Strong support is found for a temperature-dependent frictional force which has an activation energy of magnitude of the Peierls energy. With this force, an abrupt temperature-dependent transition in the critical thickness of pseudomorphic growth is explained for the first time; the island-tolayer growth-mode transition which occurs at this temperature is shown to be equivalent to a similar xdependent transition; and island growth is attributed to nucleation by misfit dislocations.PACS numbers: 68.35.Rh, 68.55.Bd, Strained-layer semiconductors are complex materials and are not presently well understood. For the growth of InGaAs on GaAs at substrate temperatures near 530 °C, there is some agreement between experiment and a simple temperature-independent theory of critical thickness (the thickness beyond which the InGaAs ceases to grow pseudomorphically) over a range of indium concentrations. 12 At lower growth temperature the experimental observations are not adequately explained and in particular, the role of time-dependent plasticity is unclear. 3 " 5 Matthews and co-workers extended the simple theory with a velocity-and temperature-dependent glide activation force 6,7 -referred to as a frictional force. Dodson and Tsao 8,9 introduced the concept of "excess stress" in analogy with plasticity theory for bulk semiconductors. 10 More recently Fox and Jesser 11 have presented a unified theory which involves frictional forces, which contains the excess stress theory, and which gives good agreement with experiments on very-low-strained ( < 0.002) GaAsP films.In this paper a frictional force is shown to account for the known properties of highly strained InGaAs on GaAs. These include a rapid transition from a small to an extremely large critical thickness over a small temperature range; an accompanying island-to-layer growthmode transition; an equivalent growth-mode transition which occurs at constant temperature but with changing indium concentration; and strong evidence that island growth is nucleated by misfit dislocations.In general there are serious difficulties in comparing critical-thickness and plasticity theories with experiment. The theories include processes described by exponential terms which may vary from insignificant to dominant over the experimental conditions of interest. The strategy here is to investigate regions of the available data which are so extreme in their behavior that they isolate only one factor; in this case a frictional force. Highly strained films (e > 0.02) have small critical thicknesses (-10 monolayers) and so dislocation velocity and multiplication effects are expected to be less significant than in thicker films with lower stresses. The data 12 are shown in Fig.

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confidence: 70%

Critical-thickness and growth-mode transitions in highly strained In_{x}Ga_{1-x}As films

Price¹

1991

Phys. Rev. Lett.

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“…For undoped crystals, the distance between partials is 5 to 6 nm, identical for a and f3 dislocations observed in equal number ; it corresponds to a stacking fault energy (S.F.E.) of 45 mJ.m-2 [58,[61][62][63][64][65]. A decrease in S.F.E.…”

Section: Formation Of Dislocations -The Nextmentioning

confidence: 99%

Dislocation multiplication in GaAs : inhibition by doping

Djemel¹,

Castaing²,

Burle-Durbec³

et al. 1989

Rev. Phys. Appl. (Paris)

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The crystal quality improvement by electrical or isoelectronic doping of L.E.C. grown GaAs crystals is related to the thermoelastic modelling of stresses during growth. The dislocation structure in as-grown and annealed crystals is deduced, in particular with the help of the results of plastic deformation. The addition of various elements of the columns II-III-IV-V-VI in GaAs is considered and its influence on the establishment of the dislocation substructure is discussed

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“…These results were corroborated by more recent work. [9][10][11][12] In other investigations, however, unusually high activation energies 13 or stress exponents [14][15][16][17] were reported. It has been argued 18 that this may be due to the fact, that the samples had been predeformed prior to the test deformation in order to achieve a homogeneous initial dislocation density or to shift the ductile-brittle transition to lower temperatures.…”

Section: Introductionmentioning

confidence: 88%

Yield point of as-grown and predeformed GaAs:Zn

Brion

Siethoff

1998

Journal of Applied Physics

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Articles you may be interested inOn the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%-32% J. Appl. Phys.Single crystals of highly Zn-doped GaAs are compressed along ͗123͘ in a constant strain-rate test at temperatures between 330 and 700°C. The yield point is studied for both the as-grown and the predeformed state, the latter achieved by strain-rate and temperature-change tests. For as-grown material two deformation regimes are established. At low temperatures the deformation is governed by a kink mechanism typical for tetrahedrally coordinated semiconductors. The activation energy and the stress exponent are deduced as Uϭ1.44 eV and nϭ3.0, respectively. These values are similar to those obtained for undoped GaAs, thus indicating that Zn additions do not appreciably influence the activation energies of kink formation and migration. Nevertheless, a strong efficiency of Zn for locking dislocations in GaAs is observed. At higher temperatures a different regime emerges, which has been also observed in other highly doped semiconductors, the basic mechanism of which, however, has not yet been elucidated. Material predeformed in the temperature-change test exhibits characteristic deviations. In these experiments the crystals behave as if the point-defect concentration or the locking efficiency of obstacles had been appreciably increased on account of predeformation.

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Thermal Activation of Plastic Deformation of Undoped GaAs between 528 and 813 K

Cited by 23 publications

References 21 publications

Critical-thickness and growth-mode transitions in highly strained In_{x}Ga_{1-x}As films

Critical-thickness and growth-mode transitions in highly strained In_{x}Ga_{1-x}As films

Dislocation multiplication in GaAs : inhibition by doping

Yield point of as-grown and predeformed GaAs:Zn

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