Thermal analyses of compound semiconductors using differential scanning calorimetry.  Application to compositional analyses of cathodically electrosynthesized cadmium telluride

Lin, Wen Yuan; Mishra, Kamal K.; Mori, E.; Rajeshwar, Krishnan

doi:10.1021/ac00207a010

Cited by 16 publications

(3 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Our previous studies (1)(2)(3)7) as well as the results from other laboratories (6) show that the thin film composition also is exceedingly sensitive to the deposition potential. Herein lies the importance of an on-line deposition and film composition monitor.…”

Section: Introductionmentioning

confidence: 73%

Application of Combined Flow Injection–Electrochemical Quartz Crystal Microgravimetry to On-line Electrodeposition and Compositional Analysis of CdSe Thin Films

Myung¹,

Jun²,

et al. 1999

Microchemical Journal

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 73%

Application of Combined Flow Injection–Electrochemical Quartz Crystal Microgravimetry to On-line Electrodeposition and Compositional Analysis of CdSe Thin Films

Myung¹,

Jun²,

et al. 1999

Microchemical Journal

View full text Add to dashboard Cite

“…It was also important to determine the concentration of Te precipitates/inclusions in the grown ingots. For that purpose, DSC tests were performed on samples of all ingots grown in our laboratory at UNIDEF [ 15 , 36 ]. A series of experiments were carried forward with decreasing amounts of Te added to samples of commercial CdZnTe (20 mg of mass in all cases) to determine the sensitivity of the thermal analysis equipment to the presence of Te precipitates/inclusions.…”

Section: Resultsmentioning

confidence: 99%

Crystalline Quality, Composition Homogeneity, Tellurium Precipitates/Inclusions Concentration, Optical Transmission, and Energy Band Gap of Bridgman Grown Single-Crystalline Cd1−xZnxTe (0 ≤ x ≤ 0.1)

et al. 2021

View full text Add to dashboard Cite

Cd1−xZnxTe (0 ≤ x ≤ 0.1) ingots were obtained by Bridgman’s method using two different speeds in order to find the optimal conditions for single-crystalline growth. Crystalline quality was studied by chemical etching, the elemental composition by wavelength dispersive spectroscopy (WDS), tellurium (Te) precipitates/inclusions concentration by differential scanning calorimetry (DSC), optical transmission by Fourier transformed infrared spectrometry (FTIR), and band gap energy (Egap) by photoluminescence (PL). It was observed that the ingots grown at a lower speed were those of the best crystalline quality, having at most three grains of different crystallographic orientation. The average dislocations density in all of them were similar and correspond to materials of good quality. EPMA results indicated that the homogeneity in the composition was excellent in the ingots central part. The concentration of Te precipitates/inclusions in all ingots was below the instrument (DSC) detection limit, 0.25% wt/wt. In the case of wafers from Cd0.96Zn0.04Te and Cd0.90Zn0.10Te ingots, the optical transmission was better than that of commercial materials and varied between 60% and 70%, while for pure CdTe, the transmission range was between 50% and 55%, the latter being decreased by the presence of Te precipitates/inclusions. The band gap energy Eg of different wafers was experimentally obtained by PL measurements at 76 K. We observed that Eg increased with the Zn concentration of the wafers, following a linear regression comparable to those proposed in the literature, and consistent with the results obtained with other techniques.

show abstract

“…La mínima cantidad de precipitados de Te que se hubieran podido detectar en las condiciones de medición era del orden de 0,25 % en masa. En ninguna muestra se detectó la señal correspondiente a la fusión de Te o sea que la concentración de precipitados e inclusiones resultó inferior al mínimo nivel (0,6% V/V) posible de medición [12] a partir del cual se vería disminuida la transmitancia óptica del CZT en el infrarrojo [10,11]. Cuando los precipitados de Te tienen un gran tamaño, la transmisión IR es inferior al 60% [13].…”

Section: Difusividad Térmicaunclassified

Propiedades físicas y cristalinas del Cd1-xZnxTe (0 ≤ x ≤ 1)

Martínez¹,

Aguirre

́Elía³

et al. 2018

Matéria (Rio J.)

View full text Add to dashboard Cite

RESUMENEl Cd 1-x Zn x Te (0 ≤ x ≤ 1) y el ZnTe son semiconductores de la familia II-VI, que se usan en forma monocristalina porque así poseen mejores propiedades estructurales y eléctricas. El CZT y el ZnTe deben poseer alta calidad cristalina y eléctrica para ser usados, el primero en detectores de rayos X y γ, y como sustratos ordenadores de películas epitaxiales aptas para la detección de la radiación IR y el segundo para la fabricación de diodos láser y emisores de luz de alta intensidad, ambos casos en el verde.En este trabajo el CZT se sintetizó por el método de Bridgman, bajo un gradiente de temperatura de 10ºC/cm a velocidades de 1,66 mm/h y 3,22 mm/h para diferentes concentraciones de Zn. Por otro lado, el ZnTe se sintetizó por transporte físico en fase vapor bajo un gradiente de temperatura de 6ºC/cm a una velocidad de 6mm/día.Por medio de revelado químico y microscopía electrónica de transmisión convencional TEM y de alta resolución (HRTEM) se estudió la calidad cristalina de ambos materiales. Se observó que los lingotes de CZT tenían una densidad de dislocaciones promedio similar en todos los lingotes crecidos en ambas velocidades y para todas las concentraciones mientras que el ZnTe mostró una menor densidad de dislocaciones. Las micrografías de TEM mostraron en todos estos materiales un orden estructural importante. Estas características indicaron que la calidad cristalina del CZT y del ZnTe era adecuada para fabricar dispositivos optoelectrónicos.También se midió la Conductividad Eléctrica, Difusividad Térmica, Calor Específico y Coeficiente Seebeck en función de la temperatura en estos materiales. Se analizó la influencia de las propiedades estructurales en sus propiedades físicas con el objeto de determinar la relación con los defectos cristalinos observados.Palabras clave: semiconductores monocristalinos II-VI, revelado químico, propiedades físicas, HRTEM, LRTEM. ABSTRACTCd 1-x Zn x Te (0 ≤ x ≤ 1) and ZnTe are II-VI semiconductors, which are used in single crystalline structure to improve their crystalline and electrical properties. The CZT and ZnTe must possess high crystalline and electrical quality to be used, the first in x or γ-ray detectors, and as substrates for suitable epitaxial films for detecting IR radiation and the second for the manufacture of laser diodes and high intensity light emitters, both cases in the green wavelengths.

show abstract

Thermal analyses of compound semiconductors using differential scanning calorimetry. Application to compositional analyses of cathodically electrosynthesized cadmium telluride

Cited by 16 publications

References 33 publications

Application of Combined Flow Injection–Electrochemical Quartz Crystal Microgravimetry to On-line Electrodeposition and Compositional Analysis of CdSe Thin Films

Application of Combined Flow Injection–Electrochemical Quartz Crystal Microgravimetry to On-line Electrodeposition and Compositional Analysis of CdSe Thin Films

Crystalline Quality, Composition Homogeneity, Tellurium Precipitates/Inclusions Concentration, Optical Transmission, and Energy Band Gap of Bridgman Grown Single-Crystalline Cd1−xZnxTe (0 ≤ x ≤ 0.1)

Propiedades físicas y cristalinas del Cd1-xZnxTe (0 ≤ x ≤ 1)

Contact Info

Product

Resources

About