Thermal analysis of high-index-contrast grating (HCG)-based VCSEL

Asadi, Mohammad Javad; Abbasian, K.; Bostanabad, D. Armaghan; Nurmohammadi, Tofiq

doi:10.1016/j.ijleo.2014.01.120

Cited by 7 publications

(1 citation statement)

References 17 publications

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“…This causes stacked layers to have reduced thermal conductivity values compared to the same materials in bulk . Therefore, to accurately model these layers, an effective thermal conductivity was used, with the lateral ( k L ) and vertical ( k V ) anisotropic thermal conductivities given by ,

k_{normalL} = \frac{d_{1} k_{1} + d_{2} k_{2}}{d_{1} + d_{2}}, k_{normalV} = \frac{d_{1} + d_{2}}{d_{1} ∖ k_{1} + d_{2} ∖ k_{2}}

where

k_{1}

k_{2}

and

d_{1}

d_{2}

are the thermal conductivities and the thicknesses of the alternating stack layers, respectively. Isotropic thermal conductivity is assumed for all other layers.…”

Section: Thermal Modelmentioning

confidence: 99%

Techniques to reduce thermal resistance in flip‐chip GaN‐based VCSELs

Mishkat-Ul-Masabih

Leonard

Cohen

et al. 2017

Phys. Status Solidi A

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The finite element method was used to determine the thermal resistance of a flip‐chip‐bonded GaN‐based vertical‐cavity surface‐emitting laser (VCSEL) with substrate removal and dielectric distributed Bragg reflectors (DBRs). In this work, we investigate the effects of the DBR configuration, mask layer alignment tolerances, aperture diameters, and cladding layer thicknesses on the thermal properties of the flip‐chip design. The current flip‐chip design suffers from high thermal resistance (∼4600 K W−1). By reducing the mask layer alignment tolerances and increasing the cladding thickness, the thermal resistance values could be made comparable to devices reported in the literature that achieved CW operation at room temperature (∼3000 K W−1). Low thermal resistance designs are critical to achieve CW operation and mitigate the effects of thermal roll‐over in flip‐chip GaN‐based VCSELs.

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k_{normalL} = \frac{d_{1} k_{1} + d_{2} k_{2}}{d_{1} + d_{2}}, k_{normalV} = \frac{d_{1} + d_{2}}{d_{1} ∖ k_{1} + d_{2} ∖ k_{2}}

where

k_{1}

k_{2}

and

d_{1}

d_{2}

are the thermal conductivities and the thicknesses of the alternating stack layers, respectively. Isotropic thermal conductivity is assumed for all other layers.…”

Section: Thermal Modelmentioning

confidence: 99%