Thermal Analysis of Lateral-Current-Injection Membrane Distributed Feedback Laser

Doi, Kyohei; Shindo, Takahiko; Lee, Jieun; Amemiya, Tomohiro; Nishiyama, N.; Arai, Shigehisa

doi:10.1109/jqe.2014.2309700

Cited by 15 publications

(12 citation statements)

References 37 publications

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“…3. We did not treat the thermal properties, as investigated in our previous work [52]. The calculation was carried out for a stripe width of 1 μm and a DBR section length of 100 μm by using the transfer matrix method (TMM) [53], where the IQE and waveguide loss of the DFB section were assumed to be 75% and 21 cm −1 , respectively.…”

Section: Design and Fabricationmentioning

confidence: 99%

High-Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate

Hiratani¹,

Inoue²,

Tomiyasu³

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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To advance on-chip optical interconnections, membrane distributed-reflector (DR) lasers with low threshold current and high-efficiency operation at one side output were realized. First, a membrane distributed Bragg reflector (DBR) laser with 80-µm-long active section and 50-µm-long DBR section was fabricated to clarify the DBR reflectivity. An external differential quantum efficiency of 35% for the output from the front facet was obtained, and the DBR reflectivity was estimated to be 75%. Next, a membrane DR laser with 61-µm-long distributed feedback section and 50-µm-long DBR section was fabricated. A threshold current of 0.48 mA, external differential quantum efficiency from the front side waveguide of 26%, and light output ratio from the front to the rear sides of 13 were obtained. The lasing spectrum showed a single-mode operation with a side-mode suppression-ratio (SMSR) of 40 dB. Finally, small-signal direct modulation was carried out and a modulation current efficiency factor of 7.9 GHz/mA 1/2 and 7 GHz/mA 1/2 were, respectively, obtained for the 30-µm-long and 61-µm-long devices.

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Section: Design and Fabricationmentioning

confidence: 99%

High-Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate

Hiratani¹,

Inoue²,

Tomiyasu³

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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“…The characteristic temperature T 0 of the laser is fitted to be 34 K. Using the method described in Ref. [25], a thermal resistance of 87 K/W is extracted, which can be further reduced by using a thinner buried oxide or by connecting the top p-contact pad to the silicon substrate. Figure 3 shows the normalized emission spectra and maximum single-mode output power (indicated by the stars) of six DFB lasers with silicon grating pitch ranging from 343 nm (Laser1) to 368 nm (Laser6).…”

mentioning

confidence: 99%

Broad wavelength coverage 23 μm III-V-on-silicon DFB laser array

Wang¹,

Sprengel²,

Boehm³

et al. 2017

Optica

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Silicon photonics is a promising integrated-optics platform for optical communication and sensing applications. Integrating 2-3 μm wavelength widely tunable lasers on silicon photonic integrated circuits enables fully integrated spectroscopic sensors with different potential applications such as multi-species trace gas spectroscopy and bio-molecule detection. Here, we demonstrate a continuous-wave (CW) operated III-V-on-silicon distributed feedback (DFB) laser array covered a broad wavelength range from 2.28 to 2.43 μm. CW operation up to 25°C and an on-chip output power of 2.7 mW in a single mode at 5°C is achieved for lasers operating at 2.35 μm wavelength. Four-channel DFB laser arrays with a continuous tuning range of 10 nm and side mode suppression ratio of 40 dB over the whole range are also presented. This work is a major advance toward chip-scale silicon photonics spectroscopic sensing systems. Gas sensing based on short-wave infrared and mid-infrared absorption spectroscopy has been proven to be a reliable technology for trace-gas measurements with fast response time and a high degree of specificity to the target gas [1,2]. However, most present optical sensors consist of discrete optical components and a bulk gas cell, which limits their viability for applications in portable and economical gas analysis. Integrated photonics platforms offer the potential to realize miniature and low-cost optical gas sensors [3][4][5][6]. As one of the most promising integrated photonics platforms, silicon photonics has been well-developed for optical communication applications during the past decade [7]. In recent years, its applications have been extended to sensing applications, including on-chip spectroscopic sensing [8]. Silicon photonics gas sensors that target different components have been demonstrated, including those that use, e.g., microring resonators [9,10] or spiral waveguides [11] to interact with the gas medium. In these gas sensors, the light from an external laser source is coupled into the silicon chip for the on-chip absorption spectroscopy measurement. The development of fully integrated silicon photonic integrated circuits (PICs) in the 2.3 μm wavelength range enable compact gas sensors with high sensitivity, since many important industrial gases (e.g., NH 3 , CO, and CH 4 ) have strong absorption lines in this wavelength range [12]. It is also valuable for bio-sensing applications, such as non-invasive blood glucose measurements [8,13]. For a compact silicon photonics spectroscopic gas sensor, an integrated and tunable single-mode laser is the key component that should be developed. Recently, heterogeneously integrated III-V-on-silicon Fabry-Perot lasers around 2 μm were realized using strained InGaAs Type I heterostructures [14]. However, the emission wavelength range of laser sources based on the InP-based Type I material is limited to around 2.3 μm [15]. Recently, we demonstrated 2.3x μm heterogeneous III-Von-silicon distributed feedback (DFB) laser sources based on an InP-based Type II heteros...

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“…The thermal conductivities used in the analysis [28][29][30] are listed in Table I. The boundary conditions are given by…”

Section: Analysis Of the Thermal Propertiesmentioning

confidence: 99%

Thermal properties of lateral-current-injection semiconductor membrane Fabry–Perot laser under continuous-wave operation

Hiratani

Doi

Lee

et al. 2015

Jpn. J. Appl. Phys.

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For the realization of on-chip optical interconnects, light sources enabling ultralow power consumption and high-efficiency operation are required. With this aim, we fabricated lateral-current-injection-type membrane Fabry-Perot lasers with a threshold current of 3.5 mA and an external differential quantum efficiency of 11% under a room temperature-continuous wave (RT-CW) condition. To the best of our knowledge, we experimentally evaluated the thermal properties of a membrane laser for the first time. From the measurement, we obtained a thermal resistance of 330 K/W, which well agreed with the theoretical value of 340 K/W. From the theoretical analysis, it was found that a reduction of the benzocyclobutene thickness was effective for reducing the thermal resistance of the membrane laser. Finally, we determined that the increase in thermal resistance for short cavity (less than 50 µm) devices is not a problem because self-heating is small for low operation current.

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Thermal Analysis of Lateral-Current-Injection Membrane Distributed Feedback Laser

Cited by 15 publications

References 37 publications

High-Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate

High-Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate

Broad wavelength coverage 23 μm III-V-on-silicon DFB laser array

Thermal properties of lateral-current-injection semiconductor membrane Fabry–Perot laser under continuous-wave operation

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