Thermal analysis of semiconductor devices and materials - Why should I not trust a thermal simulation ?

Kuball, Martin; Pomeroy, James W.; Gucmann, Filip; Öner, Bahar

doi:10.1109/bcicts45179.2019.8972763

Cited by 7 publications

(5 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Uncertain thermal properties. Another challenge for thermal modeling is validating any obtained numerical results, as the defined input parameters may contain significant uncertainties that lead to an unfaithful representation of the actual device response [28]. An example is the uncertainty that exists for thin-film thermal conductivities such as that of GaN.…”

Section: Thermal Modeling Challengesmentioning

confidence: 99%

“…For the above reasons, the validity of computational thermal analysis results depends largely on the accuracy of specified input parameters [19] and cannot be trusted without some form of experimental validation [28]. This study couples both experimental and numerical approaches to overcome their respective limitations and to offer a more complete thermal characterization of complex 3D devices, eventually providing a full 3D temperature rise profile (quantitative) as well as inferring important thermal properties of the device components (qualitative).…”

Section: Thermal Modeling Challengesmentioning

confidence: 99%

See 1 more Smart Citation

Full thermal characterization of AlGaN/GaN high electron mobility transistors on silicon, silicon carbide, and diamond substrates using a reverse modeling approach

Helou¹,

Cui²,

Tadjer

et al. 2020

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Gallium nitride (GaN) high electron mobility transistors (HEMTs) operate at high power levels and are thus especially thermally-critical devices. Not only do they require innovative thermal management strategies, but can also benefit from advanced experimental thermal characterization, both numerical and experimental, in their design and system integration stages. The thermal numerical analysis of microelectronic devices faces the challenges of complex physics and uncertain thermophysical properties which leads to numerically expensive models that are prone to error. By the use of an innovative reverse modeling approach to mitigate the above challenges, this work presents the full thermal characterization of GaN power devices with different substrates aimed at managing performance-limiting self-heating. The approach develops and optimizes a thermal simulation model to match the numerical results to experimentally-obtained thermal maps of the devices under test. The experimentally-optimized simulation model can then be used to extract full 3D temperature distributions, infer in-situ thermal properties, and provide a numerical platform that can be used to conduct further parametric studies and design iterations. The presented analysis provides a full thermal characterization of different GaN HEMT devices and compares the thermal performance of different substrates on the basis of thermal properties. The extracted properties for HEMTs on Si, SiC, and Diamond substrates are compared and a set of conclusions are presented to guide further developments in GaN HEMT thermal management strategies.

show abstract

Section: Thermal Modeling Challengesmentioning

confidence: 99%

Section: Thermal Modeling Challengesmentioning

confidence: 99%

Full thermal characterization of AlGaN/GaN high electron mobility transistors on silicon, silicon carbide, and diamond substrates using a reverse modeling approach

Helou¹,

Cui²,

Tadjer

et al. 2020

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Despite the higher speed, higher density, and improved power efficiency offered by STT-MRAM and SOT-MRAM compared to their CMOS counterparts, certain obstacles still need to be addressed. A few of them include less thermal stability [23], low magnetoresistance ratio [24], and high switching current [25]. In STT-MRAM, write speed is restricted due to its inherent incubation time [26][27][28].…”

Section: Introductionmentioning

confidence: 99%

Comparative performance evaluation of voltage gate-spin orbit torque MTJ-based digital logic circuits with 45 nm CMOS technology

Jangra,

Duhan

2024

Eng. Res. Express

View full text Add to dashboard Cite

The development of advanced logic systems relies on low-power, compact devices with incredibly fast computational speeds. Voltage gate Spin Orbit Torque Magnetic Tunnel Junction has emerged as a prominent solution, meeting these requirements and playing a crucial role in design of digital circuits. This paper concentrates on the design, implementation, and performance evaluation of gates (AND, OR, XOR) and combinational circuits (2*1 Mux, subtractor, and adder) based on VgSOT MTJ. The performance characteristics of these circuits have been evaluated, and comprehensive comparisons have been made with conventional 45nm CMOS and SOT/STT-based circuit designs. In this paper, based on the latency performance analysis, it has been established that the logic gates and combinational circuits utilizing VgSOT exhibit superior performance of approximately 96%, as compared to CMOS counterparts. Similarly, latency performance improvement of 44% and 75%, respectively is seen for VgSOT-based logic gates and combinational circuits over SOT and STT-based circuits. Analysis of power consumption in VgSOT-based logic gates has revealed remarkable power efficiency of ~98% over both CMOS-based and SOT/STT-based circuit’s implementations. The implementation of VgSOT MTJ-based design brings about notable improvements in the performance of different logic designs.

show abstract

“…Experimentally calibrated physics-based finite elements (FE) computer simulations are used for this purpose [14,20]. Such calibrated thermal simulation then allows to reliably predict temperature in other parts of the HEMT, e.g.…”

Section: Introductionmentioning

confidence: 99%

Scanning thermal microscopy for accurate nanoscale device thermography

2021

Self Cite

View full text Add to dashboard Cite

Thermal analysis of semiconductor devices and materials - Why should I not trust a thermal simulation ?

Cited by 7 publications

References 12 publications

Full thermal characterization of AlGaN/GaN high electron mobility transistors on silicon, silicon carbide, and diamond substrates using a reverse modeling approach

Full thermal characterization of AlGaN/GaN high electron mobility transistors on silicon, silicon carbide, and diamond substrates using a reverse modeling approach

Comparative performance evaluation of voltage gate-spin orbit torque MTJ-based digital logic circuits with 45 nm CMOS technology

Scanning thermal microscopy for accurate nanoscale device thermography

Contact Info

Product

Resources

About