Thermal and crystallization behaviour of 8YSZ–CeO2 system

Crystallization and grain growth characteristics of yttria-stabilized zirconia thin films grown by pulsed laser deposition

“…The crystallization temperature of 200-250°C as determined via XRD and Raman spectroscopy for the amorphous PLD-grown YSZ layers is remarkably low compared to the higher values of 400-500°C, which have been reported for amorphous YSZ powders and gels prepared by co-precipitation or sol-gel processes [26][27][28]77] and thin films deposited by spray pyrolysis [70]. Similar to the results of this work, Kiguchi et al [33] report a relatively low crystallization temperature of~300°C for amorphous 8 mol% yttria-doped zirconia layers deposited by PLD on Si substrates.…”

Thermal and crystallization behaviour of ThO2–CeO2 system

“…The Ce precipitation proceeded relatively slowly (∼9 min at pH from 4 to 9). The wide pH range of the Ce precipitation was determined by the step-by-step process of Ce(III) and Ce(IV) precipitation [12,13].…”

Synthesis of nanocrystalline La2O3–Y2O3–ZrO2 solid solutions by hydrothermal method: A crystal growth and structural study

“…The increase of 8La 2 O 3 -8YSZ lattice constant is caused by the fact that small Zr 4 þ cations (radius is 0.072 nm) were replaced by large La 3 þ cations (radius is 0.106 nm). According to the above discussion, it is concluded that the crystallization of 8La 2 O 3 -8YSZ is composed of two steps, that is, the 8YSZ matrix is mainly crystallized, followed by the ''embedding'' of La 2 O 3 into 8YSZ matrix [32]. Furthermore, the specific surface areas of these two samples were also detected.…”