Thermal and electrical stability of TaN x diffusion barriers for Cu metallization

Dalili, Neda; Liu, Qingxia; Ivey, Douglas G.

doi:10.1007/s10853-012-6763-x

Cited by 17 publications

(13 citation statements)

References 44 publications

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“…The structure of the precipitates was studied by diffraction analysis (not shown here) and the single crystal patterns closely matched both hexagonal Cu 3 Si (12) and rhombohedral η'-Cu 3 Si (11). The morphology and structure of the Cu 3 Si precipitates observed in this study are very similar to the morphology observed for reacted Si/Ta-N/Cu metallization stacks (13).…”

Section: Diffusion Barrier Characterizationsupporting

confidence: 82%

“…The structure of the room temperature phase has been identified by electron diffraction to have a two-dimensional long-period superlattice of orthorhombic type with a hexagonal sublattice (11). The reflections from Cu 3 Si precipitates in Figure 3 can be indexed to the hexagonal sublattice (12), which is similar to the Cu 3 Si phase formed upon annealing of a 14 nm thick amorphous Ta-N barrier stack (13). A secondary electron (SE) SEM image of the sample annealed at 550°C is shown in Figure 4 (a); it reveals several precipitates, 0.5-5 µm wide, protruding from the surface.…”

Section: Diffusion Barrier Characterizationmentioning

confidence: 97%

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Stability of Glassy Ta-Rh Diffusion Barriers for Cu Metallization

2013

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Amorphous Ta-Rh thin films were studied as diffusion barriers for Cu metallization. Thermodynamic calculations were performed to predict the glass forming ability of the Ta-Rh system. Various compositions were deposited by co-sputtering from two targets and the theoretically predicted amorphization range was confirmed by structural characterization using XRD and TEM observations. These calculations provide a useful guide for selecting a glass forming composition suitable for diffusion barrier applications for Cu metallization. The selected composition was studied as a diffusion barrier in contact with Cu and Si. A 13 nm-thick Ta 0.45 Rh 0.55 film is effective at temperatures up to 550°C, whereupon it dissociates into its constituents followed by formation of RhSi.

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Section: Diffusion Barrier Characterizationsupporting

confidence: 82%

Section: Diffusion Barrier Characterizationmentioning

confidence: 97%

Stability of Glassy Ta-Rh Diffusion Barriers for Cu Metallization

2013

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“…However, under an electrical stress, Cu ions would drift into the p-SiOCH(N) (porous) dielectric film. Indeed, such phenomena are more pronounced for a porous film [25,26]. As the Cu-gate is stressed with a positive bias, Cu ions are generated and then drift into a dielectric film under the external electric field.…”

Section: Resultsmentioning

confidence: 99%

Electrical Characteristics and Reliability of Nitrogen-Stuffed Porous Low-k SiOCH/Mn2O3−xN/Cu Integration

et al. 2019

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In our previous study, a novel barrier processing on a porous low-dielectric constant (low-k) film was developed: an ultrathin Mn oxide on a nitrogen-stuffed porous carbon-doped organosilica film (p-SiOCH(N)) as a barrier of the Cu film was fabricated. To form a better barrier Mn2O3−xN film, additional annealing at 450 °C was implemented. In this study, the electrical characteristics and reliability of this integrated Cu/Mn2O3−xN/p-SiOCH(N)/Si structure were investigated. The proposed Cu/Mn2O3−xN/p-SiOCH(N)/Si capacitors exhibited poor dielectric breakdown characteristics in the as-fabricated stage, although, less degradation was found after thermal stress. Moreover, its time-dependence-dielectric-breakdown electric-field acceleration factor slightly increased after thermal stress, leading to a larger dielectric lifetime in a low electric-field as compared to other metal-insulator-silicon (MIS) capacitors. Furthermore, its Cu barrier ability under electrical or thermal stress was improved. As a consequence, the proposed Cu/Mn2O3−xN/p-SiCOH(N) scheme is promising integrity for back-end-of-line interconnects.

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“…Transition metal nitrides, especially tantalum nitride (TaN), are in high demand for a wide range of applications due to their high melting point, hardness, excellent wear and corrosion resistance, refractory character, mechanical and high-temperature stability, chemical inertness, and histocompatibility [1][2][3][4][5][6]. Some prominent examples of such applications are as a protective coating material against oxidation and corrosion [7], as a diffusion barrier for Al and Cu metallization in advanced microelectronics [8][9][10][11], in phosphide and nitride optoelectronics as ohmic contact [3,4], in artificial heart valves as histocompatibility materials [12], thin film resistors [13], as ceramic pressure sensors [14], and also different mechanical applications [5,6]. The large interest for TaN arises since it is considered recently as a high thermal conductive material in microelectronic chips for the θ-TaN phase [15].…”

Section: Introductionmentioning

confidence: 99%

Study on the Electrical, Structural, Chemical and Optical Properties of PVD Ta(N) Films Deposited with Different N2 Flow Rates

Rasadujjaman

Wang

et al. 2021

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By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta(N) films were prepared with different N2 flow rates of 0, 12, 17, 25, 38, and 58 sccm. The effects of N2 flow rate on the electrical properties, crystal structure, elemental composition, and optical properties of Ta(N) were studied. These properties were characterized by the four-probe method, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). Results show that the deposition rate decreases with an increase of N2 flows. Furthermore, as resistivity increases, the crystal size decreases, the crystal structure transitions from β-Ta to TaN(111), and finally becomes the N-rich phase Ta3N5(130, 040). Studying the optical properties, it is found that there are differences in the refractive index (n) and extinction coefficient (k) of Ta(N) with different thicknesses and different N2 flow rates, depending on the crystal size and crystal phase structure.

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Thermal and electrical stability of TaN x diffusion barriers for Cu metallization

Cited by 17 publications

References 44 publications

Stability of Glassy Ta-Rh Diffusion Barriers for Cu Metallization

Stability of Glassy Ta-Rh Diffusion Barriers for Cu Metallization

Electrical Characteristics and Reliability of Nitrogen-Stuffed Porous Low-k SiOCH/Mn2O3−xN/Cu Integration

Study on the Electrical, Structural, Chemical and Optical Properties of PVD Ta(N) Films Deposited with Different N2 Flow Rates

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