Thermal and Radiation Annealing of Ge

Defect-Enhanced Charge Transfer by Ion-Solid Interactions in SiC using Large-ScaleAb InitioMolecular Dynamics Simulations

“…Defect diffusion mechanisms and corresponding migration energies also depend strongly on defect charge states, particularly in covalent and ionic materials [5,6]. It has been shown that the charge state of preexisting interstitials can be changed under low-energy electron irradiation, leading to radiation-enhanced annealing that has been observed in Si, Ge, diamond, and GaAs [7][8][9][10]. Although radiation-enhanced annealing is a well-known process in the physics and materials communities, the theoretical interpretation remains controversial [11,12].…”

Studies of Radiation Damage in Degenerate Silicon Irradiated at Low Temperatures

“…[4][5][6][7][8][9] An unusual type of radiation annealing found in n-type degenerate Si 10 is then investigated. Radiation annealing as such is not new; it was observed long ago in Ge, 11 but to our knowledge not in Si. The results of isochronal and isothermal annealing experiments over a wide temperature range are presented.…”

Perspectives in Materials Research

“…Therefore, interpretation of relaxations occurring during warming after low-temperature bombardment requires careful separation of annealing of defects from the electronic effects. Under certain circumstances, for example, where degenerate specimens are annealed in the absence of ionizing radiation, experimental study has yielded good information on pulse annealing peaks in germanium after 1.1 Mev electron (MacKay, et al, 1959) and after 4.5 Mev alpha-particle (Gobeli, 1958) bombardment near 1011K. A first-order relaxation was found at 350K (0.04 ev activation energy) and a more complex peak was observed at 65 0 K (0.06 to 0.09 ev).…”