Thermal and UV annealing of irradiated pMOS dosimetric transistors

Abstract

p-channel metal-oxide-semiconductor (pMOS) dosimetric transistors are unique radiation dosimeters that have an extremely small size (the dimensions of the sensor element are less than 1 mm × 1 mm) and allow the measurement of dose in vivo in real time, which are especially important characteristics for radiotherapy. The isothermal, isochronal and UV annealing of pMOS dosimetric transistors have been investigated. The obtained results have shown that the high temperature annealing for thin and UV annealing for thick oxide, respectively, are very useful tools for radiation defect annealing. The spontaneous annealing is high, as a probable consequence of gate material (Al gate). The investigation has also shown that not only the threshold-voltage behaviour but also the behaviour of radiation defects in the oxide and at the oxide interface has to be known. The modelling of isothermal annealing at different temperatures has been performed.

Automatic and reliable electrical characterization of MOSFETs

“…dosim known as RADFETs [9]), there is obvious ne of the different RADFET electrodes (drain a single measurement instrument. Figure 1 mental set-up for MGT (the drain current CPT (the substrate current is measured) mea pin MOSFETs.…”

Influence of Ionizing Radiation and Hot Carrier Injection on Metal-Oxide-Semiconductor Transistors

“…at the start of annealing. The papers [136][137][138][139][140][141][142][143] show the results of exposure to gamma radiation and subsequent annealing of PMOS dosimetric transistors manufactured in the company EiMicroelectronics, Nis, Serbia, while the papers [135,[143][144][145] show the results of radiation and annealing of PMOS dosimetric transistors manufactured in Tyndall National Institute, Cork, Ireland. Figure 27 shows change in threshold voltage with an increase in absorbed dose of gamma radiation for the transistors with oxide thickness of 1.23 µm [136].…”

Application of Metal-Oxide-Semiconductor structures containing silicon nanocrystals in radiation dosimetry

“…Active investigations are in progress aiming to find an effective treatment procedure. Thermal and UV annealing procedures have already been applied [17,18]. Promising pulse current annealing allowing fast recovery of the MOSFETs has also been subject of very recent investigations [19,20].…”