Thermal annealing and channel composition influences on the electrical properties of transparent-TFTs based on Zn-In-SnO ternary compound: Experiment and modeling

Boukhili, W.; Al-Ghamdi, Ahmed A.; Wageh, S.

doi:10.1016/j.cjph.2019.10.010

Cited by 4 publications

(1 citation statement)

References 25 publications

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“…Amorphous IGZO TFTs are now able to realize mobilities higher than 10 cm 2 V −1 s −1 , I on /I off ratios higher than 10 7 and SSs close to the ideal value [228][229][230][231][232][233]. performance depends on whether the material is vacuum deposited (average mobilities >20 cm 2 V −1 s −1 ) [234] or solution-based n-type metal-oxide TFTs (average mobilities ≈10 cm 2 V −1 s −1 ) [235].…”

Section: Metal-oxide Tftsmentioning

confidence: 96%

The Schottky barrier transistor in emerging electronic devices

et al. 2023

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This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of SB formation, current transport processes, and an overview of modeling are first considered. Three discussions follow, which detail the role of SB transistors in high performance, ubiquitous and cryogenic electronics. For high performance computing, the SB typically needs to be minimized to achieve optimal performance and we explore the methods adopted in carbon nanotube technology and two-dimensional electronics. On the contrary for ubiquitous electronics, the SB can be used advantageously in source-gated transistors and reconfigurable FETs for sensors, neuromorphic hardware and security applications. Similarly, judicious use of a SB can be an asset for applications involving Josephson junction FETs.

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