2012
DOI: 10.1016/j.mseb.2011.10.003
|View full text |Cite
|
Sign up to set email alerts
|

Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements

Abstract: The effects of ZnO annealing have for the first time been investigated on the rectification behaviour of highly rectifying Pd Schottky contacts deposited on ZnO using the current-voltage (IV) and capacitance-voltage (CV) measurement techniques. IV results reveal a decrease in the contact quality with increasing annealing temperature as confirmed by a decrease in the zero bias barrier height and an increase in the reverse current measured at -1.5 V. An average barrier height of (0.77 ± 0.02) eV has been calcula… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2013
2013
2024
2024

Publication Types

Select...
6

Relationship

1
5

Authors

Journals

citations
Cited by 9 publications
(2 citation statements)
references
References 22 publications
0
2
0
Order By: Relevance
“…Generally, ; B and n decreased after annealing, whereas I s increased. The decrease in ; B can be attributed to the enhanced tunneling or defect-induced changes in doping within the depletion region after high-temperature annealing and/or increase in carrier concentration [36,37], leading to the increase in the Fermi level and a decrease in the Schottky barrier height according to the following equations [36]:…”
Section: Resultsmentioning
confidence: 99%
“…Generally, ; B and n decreased after annealing, whereas I s increased. The decrease in ; B can be attributed to the enhanced tunneling or defect-induced changes in doping within the depletion region after high-temperature annealing and/or increase in carrier concentration [36,37], leading to the increase in the Fermi level and a decrease in the Schottky barrier height according to the following equations [36]:…”
Section: Resultsmentioning
confidence: 99%
“…There is a difference in the quality, i.e., the degree of rectification (in this case, defined as the ratio of the forward current to the reverse current at 1.0 V) and reverse current at 1.0 V for the references used in this article. [9][10][11][12][13][14][15] On average, the resistively/thermally deposited contacts show a higher degree of rectification compared to the e-beam deposited contacts. In using the resistive evaporation technique, one uses the thermal resistance of the material to evaporate it unlike in the electron beam deposition technique where an electron beam is used to heat and evaporate the source material.…”
Section: Introductionmentioning
confidence: 99%