Thermal annealing effects of defect reduction in GaAs on Si substrates

Abstract

High-quality GaAs films with a dislocation density of 2×106 cm−2 on (100) Si substrates have been obtained by thermal cycle annealing using the metalorganic chemical vapor deposition method. Dislocation behavior in GaAs/Si has been considered. Significant reduction effects of dislocation density in the GaAs layers on Si due to thermal annealing have been analyzed by a simple model, in which annihilation such as coalescence of dislocations is assumed to be caused by dislocation movement under high thermal stress and temperature. Numerical analysis suggests that excellent quality GaAs/Si films with a dislocation density of less than 105 cm−2 will be realized if thermal cycle annealing is carried out more than 1000 times without thermal degradation of the GaAs/Si.

III‐V Solar Cells

“…With careful control of these parameters, threading dislocation densities as low as 9.5 × 10 4 cm −2 have been achieved in lattice-mismatched InGaAs [115], while the boundary for acceptable device performance is estimated to be 1 × 10 5 cm −2 [60]. Under conditions where excessive dislocation density has accumulated during growth, strained layer superlattices and thermal cycle annealing has been shown to have remedial value [116,117]. Since the substrate of choice should host at least one lattice-matched alloy, in the discussion that follows the technologies are grouped around the substrate upon which mismatched layers are grown.…”

Heteroepitaxial Growth of GaAs/Ge Buffer Layer on Si for Metamorphic InGaAs Lasers

“…After the GaAs/Ge buffer layer growth, we conducted thermal cycle annealing (TCA) to enhance dislocation bending and annihilation [27]- [29]. Moreover, we grew InGaAs/GaAs MQWs on the GaAs/Ge buffer layer to estimate the crystalline quality from their photoluminescence (PL).…”

Dislocation Analysis in (112)B HgCdTe/CdTe/Si

“…The goal of this effort is to analyze the dislocation reduction of MBE (112)B HgCdTe/CdTe/Si by TCA. To understand the mechanisms behind the reduction in dislocation density due to TCA, a theoretical model modified from the work of Yamaguchi et al 15 has been developed which accounts for both the coalescence as well as the annihilation of dislocations as a function of annealing time, temperature, and the total number of annealing cycles performed. study.…”