Thermal annealing effects on photoluminescence properties of carbon-doped silicon-rich oxide thin films implanted with erbium

Nikas, Vasileios; Gallis, Spyros; Huang, Mengbing; Kaloyeros, Alain E.

doi:10.1063/1.3582090

Cited by 7 publications

(6 citation statements)

References 44 publications

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“…The doses of erbium ions were varied between 1 × 10 13 –1 × 10 14 cm 2 , a typical range for characterizing emission behavior of ions minimizing inter-ionic interaction [ 47 ]. After the ion implantation, the samples were wet-etched in BHF for five minutes to remove the encapsulation oxide, sacrificial oxide, and HSQ ribbon array, and annealed at 900 °C for one hour in ultra-high purity Ar to optically activate the Er ions (Er 3+ ) based on our group’s previous study [ 48 ].…”

Section: Resultsmentioning

confidence: 99%

“…As shown in Figure 8 , we observed a strong Er-induced PL emission around 1540 nm, which is the telecommunication C-band wavelength used in optical fibers, from Er-doped SiC:O NW, with no detectable Er 3+ PL from the region outside the NWs (white circled points). Er-induced PL spectra ~1540 nm corresponds to the intra-4f transition ( 4 I 13/2 → 4 I 15/2 ) of Er 3+ ions, which are effectively shielded by the outer 5s and 5p electrons, resulting photostable spectra independent of annealing temperature or ambient [ 47 , 48 ]. Furthermore, an appreciable enhancement of the Er-induced PL was observed in the NW array structure compared to its thin-film counterpart.…”

Section: Resultsmentioning

confidence: 99%

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On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays

et al. 2018

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The field of semiconductor nanowires (NWs) has become one of the most active and mature research areas. However, progress in this field has been limited, due to the difficulty in controlling the density, orientation, and placement of the individual NWs, parameters important for mass producing nanodevices. The work presented herein describes a novel nanosynthesis strategy for ultrathin self-aligned silicon carbide (SiC) NW arrays (≤ 20 nm width, 130 nm height and 200–600 nm variable periodicity), with high quality (~2 Å surface roughness, ~2.4 eV optical bandgap) and reproducibility at predetermined locations, using fabrication protocols compatible with silicon microelectronics. Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, ultraviolet-visible spectroscopic ellipsometry, atomic force microscopy, X-ray diffractometry, and transmission electron microscopy studies show nanosynthesis of high-quality polycrystalline cubic 3C-SiC materials (average 5 nm grain size) with tailored properties. An extension of the nanofabrication process is presented for integrating technologically important erbium ions as emission centers at telecom C-band wavelengths. This integration allows for deterministic positioning of the ions and engineering of the ions’ spontaneous emission properties through the resulting NW-based photonic structures, both of which are critical to practical device fabrication for quantum information applications. This holistic approach can enable the development of new scalable SiC nanostructured materials for use in a plethora of emerging applications, such as NW-based sensing, single-photon sources, quantum LEDs, and quantum photonics.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays

et al. 2018

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“…The peak close to 380 nm was attributed to ZnO crystals, thereby confirming that the SONWs contain a ZnO phase. In contrast, the PL peak close to 530 nm was attributed to the presence of nonbridging oxygen hole centers (NBOHCs), which are commonly observed in the silicon‐rich oxide (SiO x : 0 < x < 2) phase or/and ZnO‐related defects . These results clearly demonstrate that the presented SONWs consist of a well‐defined two‐color (blue and green) hybridized luminescent material.…”

Section: Resultsmentioning

confidence: 82%

Generation of White Light by Hybridization of Red–Green–Blue–Luminescent Materials

Yoon

2019

Physica Status Solidi (a)

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Herein, the fabrication of a white luminescent material with photoluminescence (PL) in the region ranging from 350 to 900 nm is reported. Formation of the luminescent material is achieved simply by the high‐temperature (1100 °C) annealing of silicon‐rich oxide nanowires containing a ZnO phase, which are grown by exposing a Zn film to Si and O plasma generated using a mixture of N2O and SiH4 gases at a low temperature (380 °C). The PL spectral response is easily tuned by varying the mixing ratio of the two gases or the Zn film thickness. The generation of white luminescence can be attributed to the hybridization of Si nanocrystals (red), silicon oxide (green), and ZnO (blue)‐based materials.

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“…19 More recent investigations suggest that defects in C-doped oxide phases are likely sensitizers for responsible for energy transfer in such structures. 20 In the white areas, the characteristic spikes in the intensity at 488 and 514 nm are a consequence of direct excitation into the 4 F 7/2 and 2 H 5/2 ligand field states (followed by nonradiative decay to the 4 I 13/2 and accompanying 1540 nm emission). Increasing the annealing temperature to 600 °C results in a uniform whitish appearance and direct Er 3+ excitation throughout the sample (data not shown).…”

Section: ■ Experimental Methodsmentioning

confidence: 99%

Erbium-Doped Mixed Oxide Nanowires of Zinc and Germanium: Role of Host Structure on Near Infrared Emission

Huang

Coffer

2012

Crystal Growth & Design

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This work describes the fabrication of Er-doped oxide nanowires containing both zinc and germanium through selected sol–gel reactions in concert with electrospinning and thermal removal of polymer templates. These nanowires exhibit strong Er3+ near-IR photoluminescence at 1.54 μm after annealing; it is found that the mechanism of this emission can be mediated through the selection of appropriate composition and annealing temperature. Relatively high Er concentrations (up to 3 at. %, excluding oxygen) can be incorporated into these structures, with retention of Er3+ emission due presumably to an absence of erbium self-quenching and associated nonradiative pathways.

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Thermal annealing effects on photoluminescence properties of carbon-doped silicon-rich oxide thin films implanted with erbium

Cited by 7 publications

References 44 publications

On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays

On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays

Generation of White Light by Hybridization of Red–Green–Blue–Luminescent Materials

Erbium-Doped Mixed Oxide Nanowires of Zinc and Germanium: Role of Host Structure on Near Infrared Emission

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