Thermal annealing effects on the stress stability in silicon dioxide films grown by plasma-enhanced chemical vapor deposition

Fu, Jianyu; Shang, Haiping; Li, Zhigang; Wang, Weibing; Chen, Dapeng

doi:10.1007/s00542-016-3005-1

Cited by 10 publications

(6 citation statements)

References 15 publications

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“…The infrared spectrum of a-SiO 1.85 :H present two absorption peaks in the region 750-1400 cm −1 . The first, centered at 815 cm −1 , corresponds to the Si-O-Si bending mode [42,45,46]. In the region 900-1400 cm −1 the main absorbance signal centered at 1050 cm −1 encompasses the Si-O-Si stretching and Si-O symmetrical modes, while exhibiting a shoulder at 1200 cm −1 due to the stretching modes associated to the Si(O 4 ) configuration (figure 5(d)).…”

Section: Fourier Transform Infrared Spectroscopymentioning

confidence: 98%

“…Also, at 2280 and 2250 cm −1 the Si-H bending modes of a-Si 3 N 4 and a-SiO 2 show no decrease in absorbance with increasing fluence; instead, a clear increase occurs above 5×10 12 cm −2 . This is probably a result of the complex behavior of H and its corresponding interaction with the Si dangling bonds and a product of the Si-N and Si-O bondbreaking due to the irradiation damage [40,46]. As the density of Si-N or Si-O bonds is related to the stretching modes [24,44,45], the decrease in the corresponding integrated absorbance signal is considered a direct result of radiation damage being created by the ion track formation process.…”

Section: Fourier Transform Infrared Spectroscopymentioning

confidence: 99%

“…At 2180 cm -1 different Si-H vibrational modes are present [40], while around 3340 cm -1 the absorption peaks from N-H2 asymmetric stretching modes are observed due to the H content of around 10 atomic percent [12] [14] [39] [44].The infrared spectrum of a-SiO1.85:H present two absorption peaks in the region 750-1400 cm -1 . The first, centered at 815 cm -1 , corresponds to the Si-O-Si bending mode[42] [45][46]. In the region 900-1400 cm -1 the main absorbance signal centered at 1050 cm -1 encompasses the Si-O-Si stretching and Si-O symmetrical modes, while exhibiting a shoulder at 1200 cm -1 due to the stretching modes associated to the Si(O4) configuration [Fig.…”

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confidence: 99%

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Nanoscale density variations induced by high energy heavy ions in amorphous silicon nitride and silicon dioxide

et al. 2018

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The cylindrical nanoscale density variations resulting from the interaction of 185 MeV and 2.2 GeV Au ions with 1.0 μm thick amorphous SiN :H and SiO :H layers are determined using small angle x-ray scattering measurements. The resulting density profiles resembles an under-dense core surrounded by an over-dense shell with a smooth transition between the two regions, consistent with molecular-dynamics simulations. For amorphous SiN :H, the density variations show a radius of 4.2 nm with a relative density change three times larger than the value determined for amorphous SiO :H, with a radius of 5.5 nm. Complementary infrared spectroscopy measurements exhibit a damage cross-section comparable to the core dimensions. The morphology of the density variations results from freezing in the local viscous flow arising from the non-uniform temperature profile in the radial direction of the ion path. The concomitant drop in viscosity mediated by the thermal conductivity appears to be the main driving force rather than the presence of a density anomaly.

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Section: Fourier Transform Infrared Spectroscopymentioning

confidence: 98%

Section: Fourier Transform Infrared Spectroscopymentioning

confidence: 99%

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confidence: 99%

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Nanoscale density variations induced by high energy heavy ions in amorphous silicon nitride and silicon dioxide

et al. 2018

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“…The result shows a significant difference between the unbiased SiC MOSFETs and the biased SiC MOSFETs, especially when exposed to gamma-ray. The impact of gamma-ray exposure on electrical characteristics was investigated, and it was noticed that defects generated in the oxide were responsible for the observed changes [30]. Gamma-ray is irradiated to create EHPs in the oxide, and the holes are trapped in defects.…”

Section: Resultsmentioning

confidence: 99%

The Effects of a Gate Bias Condition on 1.2 kV SiC MOSFETs during Irradiating Gamma-Radiation

Kim,

Yoon,

Park

et al. 2024

Micromachines

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We investigated the effects of gate bias regarding the degradation of electrical characteristics during gamma irradiation. Moreover, we observed the punch through failure of 1.2 kV rated commercial Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) due to the influence of gate bias. In addition, the threshold voltage (VT) and on-resistance (Ron) of the SiC MOSFETs decreased significantly by the influence of gate bias during gamma irradiation. We extracted the concentration of carriers and fixed charge (QF) in oxide using N-type SiC MOS capacitors and Transmission Line Measurement (TLM) patterns to analyze the effects of gamma irradiation. The Total Ionizing Dose (TID) effect caused by high-energy gamma-ray irradiation resulted in an increase in the concentration of holes and QF in both SiC and oxide. To analyze the phenomenon for increment of hole concentration in the device under gate bias, we extracted the subthreshold swing of SiC MOSFETs and verified the origin of TID effects accelerated by the gate bias. The QF and doping concentration of p-well values extracted from the experiments were used in TCAD simulations (version 2022.03) of the planar SiC MOSFET. As a result of analyzing the energy band diagram at the channel region of 1.2 kV SiC MOSFETs, it was verified that punch-through can occur in 1.2 kV SiC MOSFETs when the gate bias is applied, as the TID effect is accelerated by the gate bias.

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“…Microresonators with radius 150 μm annealed to 550° C in an O 2 ambient exhibit the highest Q factors and lowest propagation loss. O 2 ambient was chosen to minimize film stress related microcracking on the devices since it been shown to improve stress stability of the SiO x films deposited using PECVD [46]. Q I and Q L in excess of one million are measured on the resonators as shown in Fig.…”

Section: Optical Characterizationmentioning

confidence: 99%

Fabrication of Low Loss Lithium Niobate Rib Waveguides Through Photoresist Reflow

Prabhakar

Reano

2022

IEEE Photonics J.

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We present lithography and argon plasma etching of lithium niobate on insulator (LNOI) rib waveguides using reflowed photoresist etch masks and 405 nm photolithography. Melting the photoresist at temperatures greatly exceeding its glass transition temperature while minimizing feature distortion through photoresist adhesion control reduces sidewall surface roughness and allows the photoresist to be used both as the pattern mask and the hard etch mask. Waveguide sidewall surfaces exhibiting sub-nm root mean square roughness are fabricated. Dependence of sidewall roughness and angle on feature width, and propagation loss on thermal annealing of the fabricated devices is characterized. Measured quality factors on fabricated microresonators exceed one million. LNOI rib waveguides and resonators with low propagation loss increase nonlinear optical conversion efficiencies and are useful for efficient electro-optic modulation. Photolithography compatible fabrication of low loss LNOI photonic integrated circuits facilitates scalable commercialization.

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Thermal annealing effects on the stress stability in silicon dioxide films grown by plasma-enhanced chemical vapor deposition

Cited by 10 publications

References 15 publications

Nanoscale density variations induced by high energy heavy ions in amorphous silicon nitride and silicon dioxide

Nanoscale density variations induced by high energy heavy ions in amorphous silicon nitride and silicon dioxide

The Effects of a Gate Bias Condition on 1.2 kV SiC MOSFETs during Irradiating Gamma-Radiation

Fabrication of Low Loss Lithium Niobate Rib Waveguides Through Photoresist Reflow

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