2003
DOI: 10.1109/tasc.2003.813661
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Thermal annealing of Nb/Al-AlO/sub x//Nb Josephson junctions

Abstract: We thermally annealed single un-shunted Josephson junctions at temperatures of 110 to 270 C for durations of 2.5 to 90 minutes. We also exposed some junctions for three separate 15-minute periods in order to compare the result with that of a continuous 45-minute exposure. After annealing, we measured the changes in junction properties such as critical current , normal state resistance , and junction quality parameter . decreases with increased exposure, (starting at approximately 125 C) andincreases, such that… Show more

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Cited by 13 publications
(7 citation statements)
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“…Annealing is occasionally used to trim junction resistance and critical current by up to 20%. We found no degradation of junction quality even with 170 anneals, in contrast to expectations based on previous work by others [11]. Most JPL testing in this work was done at room temperature and 4 K. Functional qubit testing has been done at mK temperatures by our collaborators at D-Wave to be reported elsewhere.…”
Section: Discussioncontrasting
confidence: 50%
“…Annealing is occasionally used to trim junction resistance and critical current by up to 20%. We found no degradation of junction quality even with 170 anneals, in contrast to expectations based on previous work by others [11]. Most JPL testing in this work was done at room temperature and 4 K. Functional qubit testing has been done at mK temperatures by our collaborators at D-Wave to be reported elsewhere.…”
Section: Discussioncontrasting
confidence: 50%
“…of a set of junctions versus inverse area, for areas ranging from 0.06 µm 2 to 0.21 µm 2 before and after bridge processing. The dependence is linear and it shows a systematic increase in resistance of approximately 30% that arises from the 5 min of total bake time at 180 • C, consistent with previous studies 24 . We note that the estimated critical current density after the bridge process is 2.6 µA/µm 2 , compatible with flux qubits 25 and larger than typical critical current densities used in transmons.…”
supporting
confidence: 91%
“…The normalized resistance change follows an exponentially plateauing function (red dashed line) that caps at ∆R/R 0 = 1.8%. This trend is similar to that of low temperature (< 150 °C) thermal annealing of JJs demonstrated by [33,[36][37][38]. In order to correlate JJ temperature to laser power, we simulate the temperature (T ) of a JJ directly illuminated by a Gaussian beam with waist 0.81 µm of varying power (P ) using COMSOL Multiphysics.…”
Section: Laser-annealing Mechanismsupporting
confidence: 66%