Thermal annealing of proton-irradiated silicon solar cells

Faraday, B. J.; Statler, R. L.; Tauke, R.V.

doi:10.1109/proc.1968.6136

Cited by 10 publications

(1 citation statement)

References 5 publications

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“…The reverse annealing phenomenon was also observed in the same irradiation conditions [31,32]. The phenomenon of reverse annealing in the solar cells of low fluence proton irradiation was reported by Faraday et al [33] and Hisamatsu reported that the sample with low fluence of proton irradiation (3 × 10 11 p cm −2 ) did not show the reverse annealing feature [4]. They suggest that the differences between electron and proton irradiation have some relation to this phenomenon; namely, electron irradiation mainly generates point defects and proton irradiation mainly generates complex defects.…”

Section: Characterization Of Solar Cellssupporting

confidence: 74%

Characterization of electron- or proton-irradiated Si space solar cells by THz spectroscopy

Nagai¹,

Sumitomo

Imaizumi

et al. 2006

Semicond. Sci. Technol.

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The transmission or reflection measurement of p-type Si wafers with various resistivities was performed in the THz-IR frequency region, and the carrier concentration and mobility were evaluated by a simple Drude model. The range of electrical resistivity of 100-0.01 cm and the range of carrier concentration of 1 × 10 14 to 1 × 10 19 cm −3 can be estimated non-destructively by this method. In addition, the annealing characteristics of electron-or proton-irradiated Si single crystals doped with 10 15 cm −3 boron were characterized by this method in order to study the radiation damage of space solar cells. Combined with the results of far-IR and DLTS reported previously, THz spectroscopy can explain the recovery of carriers at high fluence samples, and the reverse annealing effect at low fluence samples as regards carrier scattering time in conjunction with the defect type.

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Section: Characterization Of Solar Cellssupporting

confidence: 74%