Thermal atomic layer deposition of aluminum oxide, nitride, and oxynitride: A mechanistic investigation
Abu Talha Aqueel Ahmed,
Afina faza Hafiyyan,
Nurhidayati Nurhidayati
et al.
Abstract:Atomic layer deposition (ALD) has been proven to be a versatile method for the deposition of thin films of various materials. It yields films with exceptional conformality and allows tunable film compositions with control of film thickness at the atomic level. Thin films of Al oxide, nitride, and oxynitride are deposited via ALD using Al(CH3)3 (TMA)/AlCl3 with H2O/NH3. Herein, surface chemical reactions are examined using density functional theory calculations to elucidate the adsorption, oxidation, and nitrid… Show more
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