Preparing two-dimensional (2D) van der Waals materials
with atomic-level
precision remains a major hurdle, preventing both a number of fundamental
explorations of quantum phenomena and a wider range of applications
that can be based on a variety of their properties. It is especially
challenging for tertiary materials, such as CrPS4, which
cannot be produced by controlled deposition but could be managed by
etching or thinning in a layer-by-layer approach. Thin flakes of this
material can display ferromagnetic or antiferromagnetic behavior depending
on the number of layers since the crystal exhibits A-type antiferromagnetic
ordering. In order to understand the magnetism down to the monolayer
limit and the dynamic excitations in magnons and excitons, and to
eventually make devices based on this and similar materials viable,
well-controlled layered structures must be produced. The existing
methods for controlling CrPS4 thickness, such as mechanical
and liquid exfoliation, are not well controlled and are prone to introducing
damage to the crystal structure. In this study, we show that thermal
atomic layer etching (ALE) can be used to controllably etch the 2D
crystals of this material without noticeable contamination. As a starting
point, CrPS4 flakes were mechanically exfoliated onto a
solid substrate and mounted in an ultra-high vacuum chamber. ALE process
consisted of a chlorine gas dose from a solid-state halogen doser
followed by exposure to gas-phase acetylacetone (acacH). This ALE
approach showed an etch rate of approximately 0.10 nm/cycle at 450
K, confirmed by atomic force microscopy. The etch rate is noticeably
faster for the flakes with a large number of defects. The overall
process is highly temperature-dependent with a narrow window for successful
application.