Thermal atomic layer etching of CoO using acetylacetone and ozone: Evidence for changes in oxidation state and crystal structure during sequential exposures

Partridge, Jonathan L.; Абдулагатов, А. И.; Sharma, Varun; Murdzek, Jessica A.; Cavanagh, Andrew S.; George, Steven M.

doi:10.1016/j.apsusc.2023.157923

Cited by 3 publications

(14 citation statements)

References 78 publications

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“…Hacac and O 3 have also been observed to change the oxidation state of the CoO surface. 27 27 Hacac has also been reported for ZnO ALE using Hacac and O 2 plasma. 26 Hacac is believed to remove Zn as Zn(acac) 2 before Hacac decomposes on the ZnO surface and stops the etching reaction.…”

Section: Introductionmentioning

confidence: 90%

“…26 Hacac may also reduce the oxidation state of the metal oxide. 27 In the second reaction, O 3 can react with carbon residue to form CO 2 and H 2 O combustion products. O 3 can also oxidize the metal oxide to a higher oxidation state.…”

Section: Introductionmentioning

confidence: 99%

“…O 3 can also oxidize the metal oxide to a higher oxidation state. 27 The O 3 reaction refreshes the metal oxide surface and enables further metal oxide thermal etching with Hacac.…”

Section: Introductionmentioning

confidence: 99%

“…Hacac has been documented for CoO ALE using Hacac and O 3 . 27 Hacac removes Co as Co(acac) 2 during the Hacac exposure. Some Hacac decomposition then leads to the slow restriction of this etching reaction.…”

Section: Introductionmentioning

confidence: 99%

“…Some Hacac decomposition then leads to the slow restriction of this etching reaction. 27 O 3 can then clean the surface and refresh the oxide surface. Hacac and O 3 have also been observed to change the oxidation state of the CoO surface.…”

Section: Introductionmentioning

confidence: 99%

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Section: Introductionmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%

“…O 3 can also oxidize the metal oxide to a higher oxidation state. 27 The O 3 reaction refreshes the metal oxide surface and enables further metal oxide thermal etching with Hacac.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Investigation of the atomic layer etching mechanism for Al₂O₃ using hexafluoroacetylacetone and H₂ plasma

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et al. 2025

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Future of plasma etching for microelectronics: Challenges and opportunities

Oehrlein,

Brandstadter,

Bruce

et al. 2024

Journal of Vacuum Science &Amp; Technology B

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Plasma etching is an essential semiconductor manufacturing technology required to enable the current microelectronics industry. Along with lithographic patterning, thin-film formation methods, and others, plasma etching has dynamically evolved to meet the exponentially growing demands of the microelectronics industry that enables modern society. At this time, plasma etching faces a period of unprecedented changes owing to numerous factors, including aggressive transition to three-dimensional (3D) device architectures, process precision approaching atomic-scale critical dimensions, introduction of new materials, fundamental silicon device limits, and parallel evolution of post-CMOS approaches. The vast growth of the microelectronics industry has emphasized its role in addressing major societal challenges, including questions on the sustainability of the associated energy use, semiconductor manufacturing related emissions of greenhouse gases, and others. The goal of this article is to help both define the challenges for plasma etching and point out effective plasma etching technology options that may play essential roles in defining microelectronics manufacturing in the future. The challenges are accompanied by significant new opportunities, including integrating experiments with various computational approaches such as machine learning/artificial intelligence and progress in computational approaches, including the realization of digital twins of physical etch chambers through hybrid/coupled models. These prospects can enable innovative solutions to problems that were not available during the past 50 years of plasma etch development in the microelectronics industry. To elaborate on these perspectives, the present article brings together the views of various experts on the different topics that will shape plasma etching for microelectronics manufacturing of the future.

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Thermal atomic layer etching of CoO using acetylacetone and ozone: Evidence for changes in oxidation state and crystal structure during sequential exposures

Cited by 3 publications

References 78 publications

Limiting or Continuous Thermal Etching of First Row Transition Metal Oxides Using Acetylacetone and Ozone

Limiting or Continuous Thermal Etching of First Row Transition Metal Oxides Using Acetylacetone and Ozone

Investigation of the atomic layer etching mechanism for Al₂O₃ using hexafluoroacetylacetone and H₂ plasma

Future of plasma etching for microelectronics: Challenges and opportunities

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Thermal atomic layer etching of CoO using acetylacetone and ozone: Evidence for changes in oxidation state and crystal structure during sequential exposures

Cited by 3 publications

References 78 publications

Limiting or Continuous Thermal Etching of First Row Transition Metal Oxides Using Acetylacetone and Ozone

Limiting or Continuous Thermal Etching of First Row Transition Metal Oxides Using Acetylacetone and Ozone

Investigation of the atomic layer etching mechanism for Al2O3 using hexafluoroacetylacetone and H2 plasma

Future of plasma etching for microelectronics: Challenges and opportunities

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Investigation of the atomic layer etching mechanism for Al₂O₃ using hexafluoroacetylacetone and H₂ plasma