“Thermal barrier” effect in energy relaxation of polaritons in HgI2

Brodin, M. S.; Blonskii, I. V.; Gushcha, A. O.; Nitsovich, V. M.; Tishchenko, V. V.; Blashkiv, V.S.; Nimetskii, V.N.

doi:10.1016/0038-1098(84)90236-9

Cited by 2 publications

(4 citation statements)

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“…The basic differences were observed in comparison with indirect-gap semiconductors such as Ge [6] and AgBr [ 7 ] .…”

Section: Resultsmentioning

confidence: 91%

“…we are not aware of any experimental studies of this kind for direct-gap semiconductors though, in view of the data for indirect-gap Ge [6] and AgBr [7], one might indeed expect some peculiarities in the limit of very low nex. I n particular, "entropy ionization" of free excitons is considered to be favoured [6].…”

Section: Andi S Brodin Et Almentioning

confidence: 89%

“…Furthermore, a remarkable similarity exists between the two basically different compounds CdSe and layered PbI,. On the other hand, the difference is obvious when comparing oiir results with those for indirect-gap semiconductors Ge [6] and AgBr [7] where only linear (y = 1) or quadratic ( y = 2) excitonic LIC had been predicted and registered (under volume excitation).…”

mentioning

confidence: 84%

“…I n particular, "entropy ionization" of free excitons is considered to be favoured [6]. It may result in a rather pcculiar behaviour of LIC both for free [6] and bound [7] Samples with different content of impurities were studied a t various temperatures. In this way the relative contributions from different relaxation channels were varied.…”

Section: Andi S Brodin Et Almentioning

confidence: 99%

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Nonlinearities in Excitonic Luminescence of Direct‐Gap Semiconductors under Very Low Optical Excitation Levels

Brodin

Gushcha

Khotiaintsev

et al. 1987

Physica Status Solidi (b)

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increases gradually with the decrease of I,,, and also becomes higher with increasing of temperat'ure. Linearity ( y = 1) is sometimes observed only a t sufficiently high I,,, above 10l6 quanta x x s-l. A phenomenological theoretical model is proposed which accounts for non-radiative surface recombination and non-uniform spatial distribution of the excited carriers and provides satisfactory qualitative agreement with the experimental findings.

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“…The basic differences were observed in comparison with indirect-gap semiconductors such as Ge [6] and AgBr [ 7 ] .…”

Section: Resultsmentioning

confidence: 91%