Thermal behavior of deep levels correlated with iron in silicon metal-oxide-semiconductor structure

Kishino, Shigenobu; Iwamoto, Susumu; Yoshida, Haruhiko; Niu, Hirohiko; Matsuda, T.

doi:10.1063/1.359543

Cited by 7 publications

(4 citation statements)

References 10 publications

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“…In order to shed more light on the existence and role of Fe i defects, we proceeded to undertake additional heat treatments of the R sample consisting of successive reannealing at 210, 400 and 1200 • C before slow cooling. The first two temperatures were chosen with the intention of comparing the behaviour of our R sample to that of a similar one in the recent work of Kishino et al [21], whereas re-annealing at 1200 • C and subsequent slow cooling aim at the reproduction of the treatment of the S sample. We found that the number of recombination centres starts to decrease after annealing at T > 400 • C, in good agreement with the results of Kishino et al [21] who reported the disappearance of Fe i after treatment above 400 • C. On the other hand, the EBIC profile recorded after re-annealing at 1200 • C and subsequent slow cooling (curve c in figure 5) is almost identical to the analogous one scanned on the original S sample (figure 2 curve a).…”

Section: Resultsmentioning

confidence: 99%

“…The first two temperatures were chosen with the intention of comparing the behaviour of our R sample to that of a similar one in the recent work of Kishino et al [21], whereas re-annealing at 1200 • C and subsequent slow cooling aim at the reproduction of the treatment of the S sample. We found that the number of recombination centres starts to decrease after annealing at T > 400 • C, in good agreement with the results of Kishino et al [21] who reported the disappearance of Fe i after treatment above 400 • C. On the other hand, the EBIC profile recorded after re-annealing at 1200 • C and subsequent slow cooling (curve c in figure 5) is almost identical to the analogous one scanned on the original S sample (figure 2 curve a). Besides the significant improvement of the EBIC overall signal (curve c in figure 5), it is worth noting that I GB for the R sample, as well as for the corresponding reference sample, recovers approximately, after re-annealing, to the corresponding value in the slow cooling case (curves a and b in figure 2).…”

Section: Resultsmentioning

confidence: 99%

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Effects of iron contamination on the electrical activity of a silicon bicrystal

Ihlal¹,

Rizk²

1996

J. Phys. D: Appl. Phys.

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Experiments of electron-beam-induced current (EBIC) and deep-level transient spectroscopy have been performed on a silicon bicrystal precontaminated with Fe and then annealed at . Contrary to all other similarly heat treated samples, whether they are as-received or deliberately contaminated with the fast diffusing Cu and/or Ni, the slowly cooled sample containing Fe exhibited an enhanced EBIC contrast and barrier effects at the grain boundary level, which have been associated with the formation of iron silicides at the interface. On the other hand, the rapid cooling has been found to `freeze' the moderately diffusing Fe in interstitial sites which act as recombination centres and are then at the origin of the observed general decrease of the EBIC in the bulk. A specific additional treatment of the quenched samples has led to the restoration and even improvement of both the EBIC signal and the minority carrier diffusion length.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Effects of iron contamination on the electrical activity of a silicon bicrystal

Ihlal¹,

Rizk²

1996

J. Phys. D: Appl. Phys.

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“…On the other hand, it has been reported that iron impurity scarcely affects the interface traps in p-type silicon wafers [2]. This shows that the enhancement of the interface traps varies with the impurity element of the heavy metals.…”

Section: Influence Of Heavy Metal Impurities On Interface Trapsmentioning

confidence: 97%

“…At the same time, we ascertained that a gold impurity greatly enhanced the interface traps [1] and an iron impurity scarcely affected them [2]. It was also clarified that the enhancement of the interface traps varied with the impurity element among the heavy metals.…”

Section: Introductionmentioning

confidence: 97%

Characterization of deep levels in Si-MOS structure using ICTS measurement

Iwamoto¹,

Yoshida²,

Kishino³

2000

Elect. Eng. Jpn.

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Interface traps and bulk traps induced by heavy metal impurities in Si‐MOS structure were characterized by isothermal capacitance transient spectroscopy (ICTS). In addition, the use of an MOS inversion time is proposed for the detection of a very low density of heavy metal impurities in the ICTS measurements. It is shown that heavy metal impurities enhanced interface trap densities as well as induced bulk traps. The degree of the enhancement varies with the species of heavy metal impurities. Interface traps may be enhanced by the substitutional heavy metal impurities. Moreover, it has been ascertained that a very low level of contamination by heavy metals can be detected by using the MOS inversion time. This has been experimentally shown by the use of a copper impurity. Furthermore, it has been clarified from the change of MOS inversion time that interface traps are also detrimental to the carrier generation lifetime. © 2000 Scripta Technica, Electr Eng Jpn, 130(4): 76–86, 2000

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Comparison of dielectric dispersion of Al2O3 and Se thin films

Deǧer

2001

Journal of Applied Physics

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Leakage mechanisms and dielectric properties of Al 2 O 3 / TiN -based metal-insulator-metal capacitors Appl. Phys. Lett. 83, 4429 (2003); 10.1063/1.1629373Electrical characteristics of metal-dielectric-metal and metal-dielectric-semiconductor structures based on electron beam evaporated Y 2 O 3 , Ta 2 O 5 and Al 2 O 3 thin film We investigate the frequency and temperature dependence of the dielectric conductivity and dielectric constant of Al 2 O 3 thin films having ionic structure and compare the results with those obtained for Se thin films having homopolar structure in the 0.1-100 kHz frequency range and in the 100-400 K temperature range. Our samples have a metal-insulator-metal configuration. Oxide-layer thickness ranges between 50 and 1550 Å for Al 2 O 3 films and 150 and 8500 Å for Se films. The existence of a minimum in the imaginary part of dielectric constant versus frequency curves for each thickness of Al 2 O 3 films leads us to conclude that two types of polarization mechanisms are dominant in different frequency regions, depending on the structure of Al 2 O 3 samples, but that only one mechanism dominates in Se samples, which do not have such minima in the imaginary part of their dielectric constant versus frequency curves.

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Thermal behavior of deep levels correlated with iron in silicon metal-oxide-semiconductor structure

Cited by 7 publications

References 10 publications

Effects of iron contamination on the electrical activity of a silicon bicrystal

Effects of iron contamination on the electrical activity of a silicon bicrystal

Characterization of deep levels in Si-MOS structure using ICTS measurement

Comparison of dielectric dispersion of Al2O3 and Se thin films

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