2024
DOI: 10.15625/0868-3166/19462
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Thermal behavior of irradiation-induced-deep level in bulk GaN used for fabricating blue light emitting diodes

Duc Tran Thien,
Thi Hai Thanh Le

Abstract: Bulk GaN was irradiated by 2 MeV electron beam at a fluence of 5 × 1016 cm2 and studied by deep level transient spectroscopy (DLTS). After irradiation, a broad peak, including at least two traps, was detected. The trap D1 (EC – 0.16 eV) observed from a broad peak is induced during the annealing process below 550K and completely annealed out at 550K after ~ 10 hours. The annealing process at 550K also forms a new trap D2 (EC – 0.25 eV). From the isothermal study the activation energy of the trap D2 in the annih… Show more

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