Thermal boundary resistance at an epitaxially perfect interface of thin films

Abstract

At the interfaces in an ideal epitaxial superlattice, it may be expected that there exists no thermal boundary resistance (TBR) due to thermal motions because the interfaces are atomically perfect. However, recent researches reported that the TBR still exists at the epitaxial interfaces of superlattices. Our previous study suggested the model, which was named as the C-M model, to predict accurately the TBR at an interface by considering a mass ratio between two species. In this study, we incorporated the effect due to an intermolecular potential well ratio into the previous model. The updated C-M model was based on the classical theory of a wave reflection and transmission, and provided an excellent agreement with the results of the molecular dynamics (MD) simulation. Furthermore, it suggests no TBR condition at an interface in superlattices.

Nonlinearity enhanced interfacial thermal conductance and rectification

“…Both models offer limited accuracy in nanoscale interfacial resistance predictions [16,17] because they make simple assumptions and neglect atomic details of actual interfaces. Classical molecular dynamics simulation is another widely used method in phonon transport and has been applied to interfacial thermal transport [18][19][20][21][22]; however due to its classical nature, it is not accurate below the Debye temperature and can not capture the quantum effects. To study the nonlinear (anharmonic) thermal transport, the effective phonon theory has been recently introduced in some dynamical models [23][24][25]; and the quantum correction one [26] can be used to study the low temperature thermal transport.…”

Shield-layers for reducing thermoelastic damping in resonating Silicon bars

“…The second assumption is that the material properties of the metal coating are identical to those of bulk material of the same substance. However, it is well known that the properties of thin films are different from the properties of bulk (Campbell 1970;Madou 2002;Gad-el-Hak 2002;Cahill et al 2003;Chen 1997;Choi and Maruyama 2005;Lukes et al 2000). The other two assumptions are a sharp interface between the layers and that no oxidation of the metal coating itself occurs.…”

Numerical simulation of thermal properties at Cu/Al interfaces based on hybrid model

“…where r is the distance between a pair of atoms to be considered; ε is the well depth and σ is the equilibrium separation. Specifically, here, ε Huang et al, 2009;Xu and Buehler, 2009;Choi and Maruyama, 2005).…”

“…Interface structures between dissimilar materials are usually under high stress gradients due to the presence of interfacial thermal mismatches ( Ju et al, 2010;Zhang et al, 2012;Grujicic et al, 2005;Yang et al, 2011). Multiscale modeling methods are widely used to analyze interfacial properties for micro/nano structures ( Ju et al, 2010;Zhang et al, 2012Zhang et al, , 2013Grujicic et al, 2005;Yang et al, 2009Yang et al, , 2011Yang et al, , 2014Curtin and Miller, 2003;Jean et al, 2011;Shan and Nackenhorst, 2010;Bobaru and Ha, 2011;Wang et al, 2008;Chen et al, 2009;Liao, 2007, 2008;Clancy et al, 2010;Ivanov and Zhigilei, 2003;Zhuo et al, 1995;Yu et al, 2011;Johnson, 1989;Lukes et al, 2000;Huang et al, 2009;Xu and Buehler, 2009;Choi and Maruyama, 2005;Hegedus and Abramson, 2006;Stevens et al, 2007). Hybrid models based on molecular dynamics (MD) and finite element (FE) were built to investigate the thermal resistance and nanocracks (Curtin and Miller, 2003;Jean et al, 2011;Shan and Nackenhorst, 2010;Bobaru and Ha, 2011).…”