Thermal calcination fabrication of porous tin dioxide for new flexible ultraviolet photodetectors

Chao, Junfeng; Sun, Xiaoyu; Xing, Shumin; Zhang, Xiutai; Gao, Suling; Du, Zhenhui

doi:10.1016/j.jallcom.2018.04.228

Cited by 8 publications

(3 citation statements)

References 34 publications

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“…Furthermore, the rise and decay times (Table , fifth and sixth columns) were comparable to some of the best performing SnO 2 -based UV photodetectors. , Here, the responsivity of the 32:1 SnO 2 –GO ratio is 400 A W –1 and is thus very high (Table and Figure b) with respect to the recent literature . Similarly, the 32:1 SnO 2 –GO nanoheterojunction detectivities (Table , eighth column) are greater than those of some of the most performing materials. ,, This photoresponsivity trend (32:1 > SnO 2 > 4:1) and the very high responsivity/detectivity measured with the 32:1 ratio suggest a potential mechanism for the enhancement of the UV light sensing . In line with the previous literature, ,,, we suggest that a p–n-type nanoheterojunction is formed between the GO, showing a p-type behavior, and the n-type SnO 2 …”

Section: Resultssupporting

confidence: 68%

“… 49 Similarly, the 32:1 SnO 2 –GO nanoheterojunction detectivities ( Table 2 , eighth column) are greater than those of some of the most performing materials. 49 , 51 , 52 This photoresponsivity trend (32:1 > SnO 2 > 4:1) and the very high responsivity/detectivity measured with the 32:1 ratio suggest a potential mechanism for the enhancement of the UV light sensing. 53 In line with the previous literature, 13 , 28 , 29 , 54 we suggest that a p–n-type nanoheterojunction is formed between the GO, showing a p-type behavior, and the n-type SnO 2 .…”

Section: Resultsmentioning

confidence: 85%

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Engineering of SnO₂–Graphene Oxide Nanoheterojunctions for Selective Room-Temperature Chemical Sensing and Optoelectronic Devices

Pargoletti

Hossain

Bernardo

et al. 2020

ACS Appl. Mater. Interfaces

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The development of high-performing sensing materials, able to detect ppb-trace concentrations of volatile organic compounds (VOCs) at low temperatures, is required for the development of next-generation miniaturized wireless sensors. Here, we present the engineering of selective room-temperature (RT) chemical sensors, comprising highly porous tin dioxide (SnO 2 )–graphene oxide (GO) nanoheterojunction layouts. The optoelectronic and chemical properties of these highly porous (>90%) p–n heterojunctions were systematically investigated in terms of composition and morphologies. Optimized SnO 2 –GO layouts demonstrate significant potential as both visible–blind photodetectors and selective RT chemical sensors. Notably, a low GO content results in an excellent UV light responsivity (400 A W –1 ), with short rise and decay times, and RT high chemical sensitivity with selective detection of VOCs such as ethanol down to 100 ppb. In contrast, a high concentration of GO drastically decreases the RT response to ethanol and results in good selectivity to ethylbenzene. The feasibility of tuning the chemical selectivity of sensor response by engineering the relative amount of GO and SnO 2 is a promising feature that may guide the future development of miniaturized solid-state gas sensors. Furthermore, the excellent optoelectronic properties of these SnO 2 –GO nanoheterojunctions may find applications in various other areas such as optoelectronic devices and (photo)electrocatalysis.

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Section: Resultssupporting

confidence: 68%

Section: Resultsmentioning

confidence: 85%

Engineering of SnO₂–Graphene Oxide Nanoheterojunctions for Selective Room-Temperature Chemical Sensing and Optoelectronic Devices

Pargoletti

Hossain

Bernardo

et al. 2020

ACS Appl. Mater. Interfaces

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“…Because of numerous potential applications and diverse novel characteristics, much attention is currently given to fabricating and classifying nanomaterials with various morphologies [1]. In the past, nanomaterials of many shapes have been designed for various types of photoresponsive devices [2][3][4][5]. Nanomaterials, particularly one-dimensional nanostructures, have novel features and a wide-ranging scope for nano-device fabrication [6,7].…”

Section: Introductionmentioning

confidence: 99%

Photoinduced charge carrier dynamics in a ZnSe quantum dot-attached CdTe system

Saeed

Iqbal

2020

Proc. R. Soc. A.

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Cite this article: Saeed S, Iqbal A, Iqbal A. 2020 Photoinduced charge carrier dynamics in a ZnSe quantum dot-attached CdTe system. Proc. R. Soc. A 476: 20190616. http://dx.A new nanohybrid material is prepared by attaching CdTe nanoneedles (NNs) to surface-modified ZnSe quantum dots (QDs). The NNs and QDs are prepared by a colloidal synthesis method in an aqueous alkaline medium. The surface modification and the attachment of nanostructures are achieved by a bifunctional ligand 3-mercaptopropionic acid (3-MPA). The band gap of the ZnSe QDs is varied by controlling the size of the QDs in order to get the maximum overlap between the absorption band of the CdTe NNs and the emission band of the ZnSe QDs, which is a prerequisite for effective charge/energy transfer. The possibility of photoinduced charge transfer (PCT) and Förster resonance energy transfer (FRET) from the donor (QDs) to the acceptor (NNs) has been assessed. Very fast (less than 800 ps) PCT and FRET from QDs to NNs occur because the emission band of QDs overlaps with the absorption band of NNs. The calculated large value of the overlapping integral, J(λ) ∼4.5 × 10 19 M −1 cm −1 nm 4 , of the donor and the acceptor bands proves the feasibility of energy transfer. These findings suggest that the ZnSe QDs can exchange photoinduced energy with the CdTe NNs effectively over a wide distance in a CdTe-ZnSe nanohybrid.

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Ultraviolet photodetectors based on wide bandgap semiconductor: a review

Ding,

Zhao,

Chen

et al. 2024

Appl. Phys. A

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Thermal calcination fabrication of porous tin dioxide for new flexible ultraviolet photodetectors

Cited by 8 publications

References 34 publications

Engineering of SnO₂–Graphene Oxide Nanoheterojunctions for Selective Room-Temperature Chemical Sensing and Optoelectronic Devices

Engineering of SnO₂–Graphene Oxide Nanoheterojunctions for Selective Room-Temperature Chemical Sensing and Optoelectronic Devices

Photoinduced charge carrier dynamics in a ZnSe quantum dot-attached CdTe system

Ultraviolet photodetectors based on wide bandgap semiconductor: a review

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Thermal calcination fabrication of porous tin dioxide for new flexible ultraviolet photodetectors

Cited by 8 publications

References 34 publications

Engineering of SnO2–Graphene Oxide Nanoheterojunctions for Selective Room-Temperature Chemical Sensing and Optoelectronic Devices

Engineering of SnO2–Graphene Oxide Nanoheterojunctions for Selective Room-Temperature Chemical Sensing and Optoelectronic Devices

Photoinduced charge carrier dynamics in a ZnSe quantum dot-attached CdTe system

Ultraviolet photodetectors based on wide bandgap semiconductor: a review

Contact Info

Product

Resources

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Engineering of SnO₂–Graphene Oxide Nanoheterojunctions for Selective Room-Temperature Chemical Sensing and Optoelectronic Devices

Engineering of SnO₂–Graphene Oxide Nanoheterojunctions for Selective Room-Temperature Chemical Sensing and Optoelectronic Devices