Thermal characterization of CVD diamond film by photoacoustic method

Takabatake, Nobuya; Kobayashi, Takeshi; Sekine, Daisuke; Izumi, Tomio

doi:10.1016/s0169-4332(00)00062-3

Cited by 9 publications

(5 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The transverse thermal conductivity of the diamond films ( k Dia ), as well as the TBR at the Pt/Dia interface ( R Pt/Dia i ) and the TBR at the Dia/Si interface ( R Dia/Si i ), was estimated from these plots and from the 2D heat-transfer model in the three-layer system. It was found that, for each sample, k Dia was located in the 450–500 W·m –1 ·K –1 range, which is consistent with the range of thermal conductivity estimations provided in previous studies. − In addition, this result demonstrates that diamond films grown through the laser-assisted combustion synthesis process are remarkable heat conductors, despite the open-air fabrication conditions propitious to nondiamond content incorporation into the film microstructure. The thermal conductivities obtained were comparable, in terms of heat conduction performance, to those reported for diamond films grown through hot-filament- or microwave-assisted CVD.…”

Section: Resultssupporting

confidence: 89%

“…The design of an efficient electronic package involving diamond as the heat-dissipative material requires accurate knowledge of its thermal properties. Numerous techniques have been employed to determine the thermal conductivity of CVD diamond films, among them joule-heating thermometry, a photoacoustic method, simple thermocouple routes, , photothermal microscopy, and holographic interferometry . Polycrystalline CVD diamond films typically exhibit thermal conductivity ranging between 300 and 700 W·m –1 ·K –1 , − which is higher than most electronic packaging materials but considerably lower than the thermal conductivity values recorded for natural diamond.…”

Section: Introductionmentioning

confidence: 99%

“…Numerous techniques have been employed to determine the thermal conductivity of CVD diamond films, among them joule-heating thermometry, a photoacoustic method, simple thermocouple routes, , photothermal microscopy, and holographic interferometry . Polycrystalline CVD diamond films typically exhibit thermal conductivity ranging between 300 and 700 W·m –1 ·K –1 , − which is higher than most electronic packaging materials but considerably lower than the thermal conductivity values recorded for natural diamond. The thermal conductivity gap existing between CVD diamond films and natural diamond is known to originate from the particular microstructure and composition exhibited by CVD diamond films. , Indeed, phonons that carry heat into diamond may be scattered in various ways.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Thermal Characterization of Diamond Films through Modulated Photothermal Radiometry

Guillemet

Kusiak

Fan

et al. 2014

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Diamond (Dia) films are promising heat-dissipative materials for electronic packages because they combine high thermal conductivity with high electrical resistivity. However, precise knowledge of the thermal properties of the diamond films is crucial to their potential application as passive thermal management substrates in electronics. In this study, modulated photothermal radiometry in a front-face configuration was employed to thermally characterize polycrystalline diamond films deposited onto silicon (Si) substrates through laser-assisted combustion synthesis. The intrinsic thermal conductivity of diamond films and the thermal boundary resistance at the interface between the diamond film and the Si substrate were investigated. The results enlighten the correlation between the deposition process, film purity, film transverse thermal conductivity, and interface thermal resistance.

show abstract

Section: Resultssupporting

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Thermal Characterization of Diamond Films through Modulated Photothermal Radiometry

Guillemet

Kusiak

Fan

et al. 2014

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…Figures 3 and 4 show our measurement results for the thermal conductivity and ESR signal intensity plotted versus annealing temperature for samples with different ion- 14 , islandlike localized defects are generated in the ion-implanted layer, for doses above 2 × 10 15 the defects suddenly delocalize and extend throughout the ion-implanted layer. This fact has been confirmed by other monitoring methods [2,3].…”

Section: Measurement Results and Discussionmentioning

confidence: 99%

“…In our prior work, we carried out an analysis of the photoacoustic signal with this theoretical model, applying it to the thermal conductivity measurements. Using this method, we measured the thermal conductivity of an implanted layer created by ion implantation into GaAs, and assessed the uniformity of a diamond layer deposited on silicon [13,14].…”

Section: Introductionmentioning

confidence: 99%

A photoacoustic study of thermal conductivity annealing curves for a silicon substrate implanted with Si ions

Takabatake¹,

Kobayashi²,

Show³

et al. 2003

Electron Comm Jpn Pt II

Self Cite

View full text Add to dashboard Cite

SUMMARYRecrystallization by annealing is part of the processing of ion-implanted semiconductor substrates because the ion implantation generates defects within the crystal. Furthermore, it was reported by Zammit's group [1] that the thermal conductivity of such substrates deteriorates remarkably after implantation. In light of these facts, we have analyzed the photoacoustic signal from a thin layer fabricated on a substrate by ion implantation, and have used the data to measure the thermal conductivity of the implanted layer in the depth direction. Our thermal conductivity measurements can be used to monitor the recrystallization of the implanted layer in the course of the annealing. We fabricated the samples by implanting Si ions into a region on top of a Si substrate at room temperature. The ions used in the implantation had an energy of 150 keV. The ion implantation doses were in the range from 1 × 10 12 to 1 × 10 16 ions/cm 2 . The thickness of the ion-implanted layer was measured by TEM to be 100 nm. By detecting the difference between the phases of photoacoustic signals coming from the ion-implanted region and from the unimplanted region, we could extract the thermal conductivity of the implanted layer from the frequency modulation characteristics of this phase difference. We used this technique to measure annealing curves for the thermal conductivity. Our results indicated that in the course of restoring the crystallinity, the thermal conductivity begins to increase at about 500 °C, and by 750 °C it has recovered to almost the same value as prior to the implantation. Our measured annealing curves for the thermal conductivity correlated strongly with measurement data on the annealing curves of the ESR signal intensity from the same samples. This result makes it clear that measurement of the thermal conductivity by the photoacoustic method is an efficient way to monitor the defect density in implanted layers.

show abstract

Synthesis, Characterization, and Applications of Diamond Films

Chandran

2019

Carbon-Based Nanofillers and Their Rubber Nanocomposites

View full text Add to dashboard Cite

Thermal characterization of CVD diamond film by photoacoustic method

Cited by 9 publications

References 9 publications

Thermal Characterization of Diamond Films through Modulated Photothermal Radiometry

Thermal Characterization of Diamond Films through Modulated Photothermal Radiometry

A photoacoustic study of thermal conductivity annealing curves for a silicon substrate implanted with Si ions

Synthesis, Characterization, and Applications of Diamond Films

Contact Info

Product

Resources

About