2001
DOI: 10.1109/6040.938309
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Thermal component model for electrothermal analysis of IGBT module systems

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Cited by 121 publications
(11 citation statements)
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“…After that the device characteristics of SiC MOSFET is analyzed for converter. [9][10][11][12][13] Optimal designing of the power electronic converter is suited. At last MPPT controller used for output power simulation.To maximize the output power from a PV cell with the help of MPPT control, 14 the modeling of PV cell is necessary(Figure 2).…”
Section: Methodsmentioning
confidence: 99%
“…After that the device characteristics of SiC MOSFET is analyzed for converter. [9][10][11][12][13] Optimal designing of the power electronic converter is suited. At last MPPT controller used for output power simulation.To maximize the output power from a PV cell with the help of MPPT control, 14 the modeling of PV cell is necessary(Figure 2).…”
Section: Methodsmentioning
confidence: 99%
“…Different ways have been proposed to derive the Cauer thermal network. A 3-D FEM method in combination with time constant analysis has been discussed in [26], which can deliver a Cauer model accurately representing the physical layers. This paper adopts a fast transformation method described in [27].…”
Section: Circuit Transformationmentioning
confidence: 99%
“…These include numerical approaches such as computational fluid dynamics (CFD), finite element analysis (FEA), analytical analysis, and lumped equivalent thermal resistor-capacitor (RC) network analysis. Numerical methods such as FEA [6,7] or CFD [8] are timeconsuming and therefore not suitable for the estimation of junction temperature history for long-time load profiles. The analytical approach solves the 1-D, 2-D, and 3-D heat diffusion equations [9][10][11] and this meshless method is faster but it is only applicable for simplified structures and it has limited accuracy when modelling the heat convection between the heatsink and the coolant.…”
Section: Introductionmentioning
confidence: 99%